Lv Lu, Dong Weikang, Li Dian, Liang Qingrong, Wang Ping, Zhao Chunyu, Luo Zhaokai, Zhang Chengyu, Huang Xiangwei, Zheng Shoujun, Cui Yuanyuan, Zhou Jiadong, Gao Yanfeng
School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China.
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China.
Small. 2024 Nov;20(47):e2402182. doi: 10.1002/smll.202402182. Epub 2024 Aug 19.
Fe-based 2D materials exhibit rich chemical compositions and structures, which may imply many unique physical properties and promising applications. However, achieving controllable preparation of ultrathin non-layered FeS crystal on SiO/Si substrate remains a challenge. Herein, the influence of temperature and molecular sieves is reported on the synthesis of ultrathin FeS nanosheets with a thickness as low as 2.3 nm by molecular sieves-assisted chemical vapor deposition (CVD). The grown FeS nanosheets exhibit a non-layered hexagonal NiAs structure and belong to the P6/mmc space group. The inverted symmetry broken structure is confirmed by the angle-resolved second harmonic generation (SHG) test. In particular, the 2D FeS nanosheets exhibit exceptional metallic behavior, with conductivity up to 1.63 × 10 S m at 300 K for an 8 nm thick sample, which is higher than that of reported 2D metallic materials. This work provides a significant contribution to the synthesis and characterization of 2D non-layered Fe-based materials.
铁基二维材料具有丰富的化学成分和结构，这可能暗示着许多独特的物理性质和广阔的应用前景。然而，在SiO/Si衬底上实现超薄非层状FeS晶体的可控制备仍然是一个挑战。在此，报道了温度和分子筛对通过分子筛辅助化学气相沉积（CVD）合成厚度低至2.3 nm的超薄FeS纳米片的影响。生长的FeS纳米片呈现非层状六方NiAs结构，属于P6/mmc空间群。通过角分辨二次谐波产生（SHG）测试证实了其反演对称性破缺结构。特别是，二维FeS纳米片表现出优异的金属行为，对于一个8 nm厚的样品，在300 K时电导率高达1.63×10 S m，高于已报道的二维金属材料。这项工作为二维非层状铁基材料的合成和表征做出了重要贡献。
