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全输出同步电击时递增性电击线圈阻抗的正常化。

Normalization of increasing shocking coil impedance with full output synchronized shock.

机构信息

Department of Cardiovascular Medicine, Hokkaido University Graduate School of Medicine, Sapporo, Japan.

Department of Cardiology, Hokko Memorial Hospital, Sapporo City, Japan.

出版信息

J Cardiovasc Electrophysiol. 2024 Nov;35(11):2251-2253. doi: 10.1111/jce.16416. Epub 2024 Aug 21.

DOI:10.1111/jce.16416
PMID:39169529
Abstract

INTRODUCTION

Impedance is a crucial parameter in cardiovascular implantable electronic devices (CIEDs). Clinically, most CIEDs measure impedance using low voltage sub-threshold measurement (LVSM). Although the LVSM of shock impedance (LVSM-SI) is generally comparable with high voltage shock impedance (HVSI), LVSM-SI might be inaccurate if peri-lead tissue degeneration occurs.

METHODS AND RESULTS

We present a case of elevated LVSM-SI occurring 8 years post-lead implantation, possibly attributed to encapsulation of the right ventricular lead coil. After 0.1 J shock was delivered, a full output synchronized shock was administered to measure HVSI, revealing a normal value. Furthermore, LVSM-SI was normalized and maintained within the normal range during long-term follow-up.

CONCLUSION

Our findings suggest conducting a full-output synchronized shock test to assess HVSI when abnormal LVSM-SI is detected in the remote phase post-ICD implantation, which may be considered to help normalize LVSM shock impedance.

摘要

引言

阻抗是心血管植入式电子设备(CIED)的一个关键参数。临床上,大多数 CIED 使用低电压阈下测量(LVSM)来测量阻抗。尽管电击阻抗的 LVSM(LVSM-SI)通常与高压电击阻抗(HVSI)相当,但如果发生导线周围组织退化,LVSM-SI 可能会不准确。

方法和结果

我们报告了一例植入导线 8 年后出现 LVSM-SI 升高的病例,可能归因于右心室导线线圈的包裹。在给予 0.1 J 电击后,给予全输出同步电击以测量 HVSI,结果显示正常。此外,LVSM-SI 在长期随访期间得到了正常化并保持在正常范围内。

结论

我们的发现表明,当在 ICD 植入后的远程阶段检测到异常的 LVSM-SI 时,应进行全输出同步电击测试以评估 HVSI,这可能有助于正常化 LVSM 电击阻抗。

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