Department of Cardiovascular Medicine, Hokkaido University Graduate School of Medicine, Sapporo, Japan.
Department of Cardiology, Hokko Memorial Hospital, Sapporo City, Japan.
J Cardiovasc Electrophysiol. 2024 Nov;35(11):2251-2253. doi: 10.1111/jce.16416. Epub 2024 Aug 21.
Impedance is a crucial parameter in cardiovascular implantable electronic devices (CIEDs). Clinically, most CIEDs measure impedance using low voltage sub-threshold measurement (LVSM). Although the LVSM of shock impedance (LVSM-SI) is generally comparable with high voltage shock impedance (HVSI), LVSM-SI might be inaccurate if peri-lead tissue degeneration occurs.
We present a case of elevated LVSM-SI occurring 8 years post-lead implantation, possibly attributed to encapsulation of the right ventricular lead coil. After 0.1 J shock was delivered, a full output synchronized shock was administered to measure HVSI, revealing a normal value. Furthermore, LVSM-SI was normalized and maintained within the normal range during long-term follow-up.
Our findings suggest conducting a full-output synchronized shock test to assess HVSI when abnormal LVSM-SI is detected in the remote phase post-ICD implantation, which may be considered to help normalize LVSM shock impedance.
阻抗是心血管植入式电子设备(CIED)的一个关键参数。临床上,大多数 CIED 使用低电压阈下测量(LVSM)来测量阻抗。尽管电击阻抗的 LVSM(LVSM-SI)通常与高压电击阻抗(HVSI)相当,但如果发生导线周围组织退化,LVSM-SI 可能会不准确。
我们报告了一例植入导线 8 年后出现 LVSM-SI 升高的病例,可能归因于右心室导线线圈的包裹。在给予 0.1 J 电击后,给予全输出同步电击以测量 HVSI,结果显示正常。此外,LVSM-SI 在长期随访期间得到了正常化并保持在正常范围内。
我们的发现表明,当在 ICD 植入后的远程阶段检测到异常的 LVSM-SI 时,应进行全输出同步电击测试以评估 HVSI,这可能有助于正常化 LVSM 电击阻抗。