Jia Xiaofei, Wei Qun, Zhu Yan, Zhang Wenpeng, He Liang
Xidian University, Xi an, 710071, China.
Ankang University, Ankang, 725000, China.
Small. 2024 Nov;20(47):e2403659. doi: 10.1002/smll.202403659. Epub 2024 Aug 21.
The shrinkage of metal oxide semiconductor field effect transistor (MOSFET) to the small size of the nanoscale results in changes in their channel current noise composition. This paper determines the channel current noise composition of 90 nm MOSFET through experiments, and according to the device material and noise characteristics analysis, the channel current noise of 90 nm and below is obtained, which not only contains thermal noise and suppressed channel shot noise, but also adds suppressed gate tunneling shot noise and cross-correlation noise. Then, Monte Carlo simulation of 10 nm MOSFET noise is further used to determine the channel current composition of small size nanoscale devices. Subsequently, based on the device structure and fundamental characteristics of channel current noise, the channel current noise model is established. Finally, this model is employed to analyze the relationship between thermal noise, suppressed shot noise, cross-correlation noise, and channel current noise in relation to bias parameters and device characteristics. The theoretical results are basically consistent with the experimental and the simulated results, and the channel noise increases with the increase of bias voltage. This achievement holds promise for enhancing the operational efficiency, reliability, and lifetime of nanoscale small-sized MOSFET devices.
金属氧化物半导体场效应晶体管（MOSFET）尺寸缩小至纳米级的小尺寸会导致其沟道电流噪声成分发生变化。本文通过实验确定了90纳米MOSFET的沟道电流噪声成分，并根据器件材料和噪声特性分析，得出90纳米及以下的沟道电流噪声，其不仅包含热噪声和抑制型沟道散粒噪声，还增加了抑制型栅隧穿散粒噪声和互相关噪声。然后，进一步利用10纳米MOSFET噪声的蒙特卡罗模拟来确定小尺寸纳米级器件的沟道电流成分。随后，基于器件结构和沟道电流噪声的基本特性，建立了沟道电流噪声模型。最后，利用该模型分析了热噪声、抑制型散粒噪声、互相关噪声与沟道电流噪声之间关于偏置参数和器件特性的关系。理论结果与实验和模拟结果基本一致，且沟道噪声随偏置电压的增加而增大。这一成果有望提高纳米级小尺寸MOSFET器件的运行效率、可靠性和寿命。
