Yan Jing
College of Physics and Electronic Engineering, Qilu Normal University, Jinan 250200, China.
Nanomaterials (Basel). 2024 Aug 14;14(16):1343. doi: 10.3390/nano14161343.
To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal-organic decomposition process. The effect of the annealing atmosphere on the performance of BiFeO films was assessed at 440 ± 5 °C. By using a N-rich atmosphere, a large remnant polarization (78.1 μC/cm @ 1165.2 kV/cm), and a high rectangularity (91.3% @ 1165.2 kV/cm) of the loop, excellent charge-retaining ability of up to 1.0 × 10 s and outstanding fatigue resistance after 1.0 × 10 switching cycles could be observed. By adopting a N-rich atmosphere and aluminum foil substrates, acceptable electrical properties (~70 μC/cm @ 1118.1 kV/cm) of the BiFeO films were achieved at the very low annealing temperature of 365 ± 5 °C. These results offer a new approach for lowering the annealing temperature for integrated ferroelectrics in high-density FeRAM applications.
为了与互补金属氧化物半导体（CMOS）兼容，铁电薄膜需要较低的制备温度（<500°C）。在本研究中，通过金属有机分解工艺在铝箔上于低退火温度（<450°C）成功制备了BiFeO薄膜。在440±5°C下评估了退火气氛对BiFeO薄膜性能的影响。通过使用富氮气氛，可以观察到较大的剩余极化强度（在1165.2 kV/cm时约为78.1 μC/cm²）、回线的高矩形度（在1165.2 kV/cm时约为91.3%）、高达1.0×10⁵ s的优异电荷保持能力以及在1.0×10⁶次开关循环后的出色抗疲劳性。通过采用富氮气氛和铝箔衬底，在365±5°C的极低退火温度下实现了BiFeO薄膜可接受的电学性能（在1118.1 kV/cm时约为70 μC/cm²）。这些结果为在高密度铁电随机存取存储器（FeRAM）应用中降低集成铁电体的退火温度提供了一种新方法。
