集成在硅上的BiFeO₃/BaTiO₃双层的储能特性

Energy Storage Characteristics of BiFeO₃/BaTiO₃ Bi-Layers Integrated on Si.

作者信息

Liu Menglin, Zhu Hanfei, Zhang Yunxiang, Xue Caihong, Ouyang Jun

机构信息

Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China.

Suzhou Institute of Shandong University, Suzhou 215123, China.

出版信息

Materials (Basel). 2016 Nov 18;9(11):935. doi: 10.3390/ma9110935.

DOI:10.3390/ma9110935

PMID:28774055

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5457274/

Abstract

BiFeO₃/BaTiO₃ bi-layer thick films (~1 μm) were deposited on Pt/Ti/SiO₂/(100) Si substrates with LaNiO₃ buffer layers at 500 °C via a rf magnetron sputtering process. X-ray diffraction (XRD) analysis revealed that both BiFeO₃ and BaTiO₃ layers have a (00) preferred orientation. The films showed a small remnant polarization ( ~ 7.8 μC/cm²) and a large saturated polarization ( ~ 65 μC/cm²), resulting in a slim polarization-electric field () hysteresis loop with improved energy storage characteristics ( = 71 J/cm³, = 61%). The successful "slim-down" of the loop from that of the pure BiFeO₃ film can be attributed to the competing effects of space charges and the interlayer charge coupling on charge transport of the bi-layer film. The accompanying electrical properties of the bi-layer films were measured and the results confirmed their good quality.

摘要

通过射频磁控溅射工艺，在500℃下，在具有LaNiO₃缓冲层的Pt/Ti/SiO₂/(100)Si衬底上沉积了BiFeO₃/BaTiO₃双层厚膜（约1μm）。X射线衍射（XRD）分析表明，BiFeO₃层和BaTiO₃层均具有（00）择优取向。这些薄膜表现出小的剩余极化强度（约7.8μC/cm²）和大的饱和极化强度（约65μC/cm²），从而形成了具有改善的储能特性（=71J/cm³，=61%）的细长极化-电场（）磁滞回线。与纯BiFeO₃薄膜相比，该磁滞回线成功地“变窄”，这可归因于空间电荷和层间电荷耦合对双层薄膜电荷传输的竞争效应。测量了双层薄膜的相关电学性能，结果证实了它们的良好质量。