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基于 Bi(FeMnTi)O 薄膜的柔性、耐高温、无疲劳铁电存储器。

Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(FeMnTi)O Thin Film.

机构信息

Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials , University of Wollongong , Innovation Campus, North Wollongong , NSW 2500 , Australia.

出版信息

ACS Appl Mater Interfaces. 2019 Apr 3;11(13):12647-12655. doi: 10.1021/acsami.9b01464. Epub 2019 Mar 25.

DOI:10.1021/acsami.9b01464
PMID:30874425
Abstract

A recent hot-spot topic for flexible and wearable devices involves high-performance nonvolatile ferroelectric memories operating under compressive or tensile mechanical deformations. This work presents the direct fabrication of a flexible (Mn,Ti)-codoped multiferroic BiFeO film capacitor with Pt bottom and Au top electrodes on mica substrate. The fabricated polycrystalline Bi(FeMnTi)O film on mica exhibits superior ferroelectric switching behavior with robust saturated polarization ( P ∼ 93 μC/cm) and remanent polarization ( P ∼ 66 μC/cm) and excellent frequency stability (1-50 kHz) and temperature resistance (25-200 °C), as well as reliable long-lifetime operation. More saliently, it can be safely bent to a small radius of curvature, as low as 2 mm, or go through repeated compressive/tensile mechanical flexing for 10 bending times at 4 mm radius without any obvious deterioration in polarization, retention time at 10 s, or fatigue resistance after 10 switching cycles. These findings demonstrate a novel route to designing flexible BiFeO-based ferroelectric memories for information storage and data processing, with promising applications in next-generation smart electronics.

摘要

最近,柔性可穿戴设备的一个热门话题是在压缩或拉伸机械变形下运行的高性能非易失性铁电存储器。本工作在云母衬底上直接制备了具有 Pt 底电极和 Au 顶电极的柔性(Mn,Ti)共掺杂多铁性 BiFeO 薄膜电容器。在云母上制备的多晶 Bi(FeMnTi)O 薄膜表现出优异的铁电开关行为,具有强大的饱和极化(P∼93 μC/cm)和剩余极化(P∼66 μC/cm),以及出色的频率稳定性(1-50 kHz)和温度稳定性(25-200°C),以及可靠的长寿命操作。更突出的是,它可以安全地弯曲到小曲率半径,低至 2mm,或经过重复的压缩/拉伸机械弯曲 10 次,在 4mm 半径下,极化、10s 的保持时间或 10 次开关循环后的疲劳阻力没有任何明显恶化。这些发现为设计用于信息存储和数据处理的基于 BiFeO 的柔性铁电存储器提供了一条新途径,有望在下一代智能电子产品中得到应用。

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