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退火过程中抑制掩埋缺陷的形成可实现明亮的钙钛矿发光二极管。

Suppressing Formation of Buried Defects during Annealing Enables Bright Perovskite Light-Emitting Diodes.

作者信息

Song Bo, Tang Yang, Li Xiaomeng, Meng Fanwen, Gao Chang, Chang Jiamin, Lou Zhidong, Hu Yufeng, Teng Feng, Qin Liang, Hou Yanbing

机构信息

Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Beijing 100044, China.

出版信息

ACS Appl Mater Interfaces. 2024 Aug 28;16(34):45704-45712. doi: 10.1021/acsami.4c08637. Epub 2024 Aug 13.

DOI:10.1021/acsami.4c08637
PMID:39199021
Abstract

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is a promising hole-transporting material for perovskite light-emitting diodes (PeLEDs). However, intrinsic luminance quenching at the PEDOT:PSS/perovskite interface causes deterioration of performance. Here, we develop a facile and effective strategy to passivate the interface defects via the modification of PEDOT:PSS by l-norvaline. As a pre-buried additive, l-norvaline not only reacts with PEDOT:PSS, but also forms the coordination and hydrogen bond with perovskite. We demonstrated that the generation of buried defects at the PEDOT:PSS/perovskite interface originates from the crystallization process of the perovskite film during annealing by in-situ photoluminescence measurements. The surface of l-norvaline-modified PEDOT:PSS can passivate the interfacial defects and inhibit exciton quenching. As a result, the PeLED shows a good device performance with a luminance of 80089 cd m at 509 nm and an external quantum efficiency of 13.04%.

摘要

聚(3,4-乙撑二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)是一种用于钙钛矿发光二极管(PeLEDs)的很有前景的空穴传输材料。然而,PEDOT:PSS/钙钛矿界面处的固有亮度猝灭会导致性能下降。在此,我们开发了一种简便有效的策略,通过用L-正缬氨酸修饰PEDOT:PSS来钝化界面缺陷。作为一种预埋添加剂,L-正缬氨酸不仅与PEDOT:PSS反应,还与钙钛矿形成配位和氢键。我们通过原位光致发光测量证明,PEDOT:PSS/钙钛矿界面处埋藏缺陷的产生源于退火过程中钙钛矿薄膜的结晶过程。L-正缬氨酸修饰的PEDOT:PSS表面可以钝化界面缺陷并抑制激子猝灭。结果,该PeLED在509nm处具有80089 cd m的亮度和13.04%的外量子效率,表现出良好的器件性能。

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