Gorczyca Iza, Suski Tadek, Perlin Piotr, Grzegory Izabella, Kaminska Agata, Staszczak Grzegorz
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland.
Materials (Basel). 2024 Aug 13;17(16):4022. doi: 10.3390/ma17164022.
Using the example of III-V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN), this review presents the special role of hydrostatic pressure in studying semiconductor properties. Starting with a brief description of high-pressure techniques for growing bulk crystals of nitride compounds, we focus on the use of hydrostatic pressure techniques in both experimental and theoretical investigations of the special properties of nitride compounds, their alloys, and quantum structures. The bandgap pressure coefficient is one of the most important parameters in semiconductor physics. Trends in its behavior in nitride structures, together with trends in pressure-induced phase transitions, are discussed in the context of the behavior of other typical semiconductors. Using InN as an example, the pressure-dependent effects typical of very narrow bandgap materials, such as conduction band filling or effective mass behavior, are described. Interesting aspects of bandgap bowing in In-containing nitride alloys, including pressure and clustering effects, are discussed. Hydrostatic pressure also plays an important role in the study of native defects and impurities, as illustrated by the example of nitride compounds and their quantum structures. Experiments and theoretical studies on this topic are reviewed. Special attention is given to hydrostatic pressure and strain effects in short periods of nitride superlattices. The explanation of the discrepancies between theory and experiment in optical emission and its pressure dependence from InN/GaN superlattices led to the well-documented conclusion that InN growth on the GaN substrate is not possible. The built-in electric field present in InGaN/GaN and AlGaN/GaN heterostructures crystallizing in a wurtzite lattice can reach several MV/cm, leading to drastic changes in the physical properties of these structures and related devices. It is shown how hydrostatic pressure modifies these effects and helps to understand their origin.
以纤锌矿结构结晶的III-V族氮化物（氮化镓、氮化铝和氮化铟）为例，本综述介绍了静水压力在研究半导体特性方面的特殊作用。首先简要描述了用于生长氮化物化合物块状晶体的高压技术，我们重点关注静水压力技术在氮化物化合物、其合金和量子结构特殊性质的实验和理论研究中的应用。带隙压力系数是半导体物理学中最重要的参数之一。结合其他典型半导体的行为，讨论了其在氮化物结构中的行为趋势以及压力诱导相变的趋势。以氮化铟为例，描述了非常窄带隙材料典型的压力相关效应，如导带填充或有效质量行为。讨论了含铟氮化物合金中带隙弯曲的有趣方面，包括压力和聚集效应。静水压力在本征缺陷和杂质的研究中也起着重要作用，以氮化物化合物及其量子结构为例进行了说明。综述了关于该主题的实验和理论研究。特别关注了氮化物超晶格短周期中的静水压力和应变效应。对氮化铟/氮化镓超晶格光发射及其压力依赖性方面理论与实验差异的解释得出了一个有充分记录的结论，即在氮化镓衬底上生长氮化铟是不可能的。纤锌矿晶格中结晶的氮化铟镓/氮化镓和氮化铝镓/氮化镓异质结构中存在的内建电场可达到数兆伏/厘米，导致这些结构和相关器件的物理性质发生剧烈变化。展示了静水压力如何改变这些效应并有助于理解其起源。
