Rogalski Antoni, Hu Weida, Wang Fang, Wang Yang, Martyniuk Piotr
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
Materials (Basel). 2024 Aug 13;17(16):4029. doi: 10.3390/ma17164029.
Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their relative simplicity, high-efficiency processing and low production cost. Significant improvement has been made in the detection performance and the photodetectors' design, especially operating in the visible (VIS) and near-infrared (NIR) regions. This paper attempts to determine the importance of those devices in the broad group of standard VIS and NIR detectors. The paper evaluates the most important parameters of perovskite detectors, including current responsivity (), detectivity (*) and response time (), compared to the standard photodiodes (PDs) available on the commercial market. The conclusions presented in this work are based on an analysis of the reported data in the vast pieces of literature. A large discrepancy is observed in the demonstrated and *, which may be due to two reasons: immature device technology and erroneous * estimates. The published performance at room temperature is even higher than that reported for typical detectors. The utmost * for perovskite detectors is three to four orders of magnitude higher than commercially available VIS PDs. Some papers report a * close to the physical limit defined by signal fluctuations and background radiation. However, it is likely that this performance is overestimated. Finally, the paper concludes with an attempt to determine the progress of perovskite optoelectronic devices in the future.
钙钛矿因其具有多种优势，如长载流子扩散长度、高吸收系数、高载流子迁移率、浅缺陷能级以及高质量晶体等，已在光电子学领域得到广泛应用。钙钛矿器件迅速的技术发展与其相对简单性、高效加工和低成本相关。在检测性能和光探测器设计方面已取得显著进展，尤其是在可见光（VIS）和近红外（NIR）区域工作的探测器。本文试图确定这些器件在标准VIS和NIR探测器这一广泛类别中的重要性。与商业市场上现有的标准光电二极管（PDs）相比，本文评估了钙钛矿探测器的最重要参数，包括电流响应度（）、探测率（）和响应时间（）。本工作中呈现的结论基于对大量文献中报道数据的分析。在已展示的和方面观察到很大差异，这可能有两个原因：器件技术不成熟和估计错误。室温下公布的性能甚至高于典型探测器的报道性能。钙钛矿探测器的最大比市售VIS PDs高三个到四个数量级。一些论文报道的*接近由信号波动和背景辐射定义的物理极限。然而，这种性能很可能被高估了。最后，本文试图确定钙钛矿光电器件未来的进展情况并得出结论。
