Zou Yuting, Zou Tingting, Zhao Chen, Wang Bin, Xing Jun, Yu Zhi, Cheng Jinluo, Xin Wei, Yang Jianjun, Yu Weili, Dong Huanli, Guo Chunlei
The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China.
University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Small. 2020 Jun;16(25):e2000733. doi: 10.1002/smll.202000733. Epub 2020 May 14.
Organolead trihalide perovskites have attracted significant attention for optoelectronic applications due to their excellent physical properties in the past decade. Generally, both grain boundaries in perovskite films and the device structure play key roles in determining the device performance, especially for horizontal-structured device. Here, the first optimized vertical-structured photodetector with the perovskite single crystal MAPbBr as the light absorber and graphene as the transport layer is shown. The hybrid device combines strong photoabsorption characteristics of perovskite and high carrier mobility of flexible graphene, exhibits excellent photoresponse performance with high photoresponsivity (≈1017.1 A W ) and high photodetectivity (≈2.02 × 10 Jones) in a low light intensity (0.66 mW cm ) under the actuations of 3 V bias and laser irradiation at 532 nm. In particular, an ultrahigh photoconductive gain of ≈2.37 × 10 is attained because of fast charge transfer in the graphene and large recombination lifetime in the perovskite single crystal. The vertical architecture combining perovskite crystal with highly conductive graphene offers opportunities to fulfill the synergistic effect of perovskite and 2D materials, is thus promising for developing high-performance electronic and optoelectronic devices.
在过去十年中，有机铅三卤化物钙钛矿因其优异的物理性能而在光电子应用中备受关注。一般来说，钙钛矿薄膜中的晶界和器件结构在决定器件性能方面都起着关键作用，特别是对于水平结构的器件。在此，展示了首个以钙钛矿单晶MAPbBr作为光吸收体、石墨烯作为传输层的优化垂直结构光电探测器。该混合器件结合了钙钛矿的强光吸收特性和柔性石墨烯的高载流子迁移率，在3 V偏压和532 nm激光照射的驱动下，在低光强（0.66 mW cm ）下表现出优异的光响应性能，具有高光响应度（≈1017.1 A W ）和高探测率（≈2.02 × 10 Jones）。特别是，由于石墨烯中的快速电荷转移和钙钛矿单晶中的大复合寿命，实现了≈2.37 × 10 的超高光电导增益。将钙钛矿晶体与高导电性石墨烯相结合的垂直结构为实现钙钛矿与二维材料的协同效应提供了机会，因此有望用于开发高性能电子和光电器件。
