Xiao Han, Zhao Ruiyong, Liu Yulan, Liu Yuanzhen, Chen Jing
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200031, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2024 Aug 22;15(8):1056. doi: 10.3390/mi15081056.
The von Neumann architecture is no longer sufficient for handling large-scale data. In-memory computing has emerged as the potent method for breaking through the memory bottleneck. A new 10T SRAM bitcell with row and column control lines called RC-SRAM is proposed in this article. The architecture based on RC-SRAM can achieve bi-directional and operand-controllable logic-in-memory and search operations through different signal configurations, which can comprehensively respond to various occasions and needs. Moreover, we propose threshold-controlled logic gates for sensing, which effectively reduces the circuit area and improves accuracy. We validate the RC-SRAM with a 28 nm CMOS technology, and the results show that the circuits are not only full featured and flexible for customization but also have a significant increase in the working frequency. At VDD = 0.9 V and T = 25 °C, the bi-directional search frequency is up to 775 MHz and 567 MHz, and the speeds for row and column Boolean logic reach 759 MHz and 683 MHz.
冯·诺依曼架构已不足以处理大规模数据。内存计算作为突破内存瓶颈的有效方法应运而生。本文提出了一种具有行和列控制线的新型10T SRAM存储单元，称为RC-SRAM。基于RC-SRAM的架构可通过不同的信号配置实现双向和操作数可控的内存逻辑及搜索操作，能全面应对各种场合和需求。此外，我们提出了用于传感的阈值控制逻辑门，有效减小了电路面积并提高了精度。我们采用28纳米CMOS技术对RC-SRAM进行了验证，结果表明这些电路不仅功能齐全且便于定制，工作频率也有显著提高。在VDD = 0.9 V和T = 25 °C时，双向搜索频率高达775 MHz和567 MHz，行和列布尔逻辑的速度分别达到759 MHz和683 MHz。
