一种用于制备具有光电性能的锡掺杂氧化镓薄膜的气溶胶辅助化学气相沉积方法。
An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties.
作者信息
Chen Ruizhe, Sathasivam Sanjayan, Borowiec Joanna, Carmalt Claire J
机构信息
Materials Chemistry Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
School of Engineering, London South Bank University, London SE1 0AA, U.K.
出版信息
ACS Appl Electron Mater. 2024 Aug 12;6(8):6085-6091. doi: 10.1021/acsaelm.4c00973. eCollection 2024 Aug 27.
Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of GaO films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped GaO films, reducing it from 4.2 × 10 Ω cm to 2 × 10 Ω cm for the 2.5 at. % Sn:GaO compared to the nominally undoped GaO.
氧化镓是一种宽带隙化合物半导体材料，因其在气体传感器、液晶显示器、透明电极和紫外线探测器等多种应用中而闻名。本文详细介绍了使用溶解在甲醇中的乙酰丙酮镓和三氯化单丁基锡通过气溶胶辅助化学气相沉积法合成锡掺杂氧化镓薄膜的过程。观察到锡掺杂导致氧化镓薄膜在可见光谱范围内的透光率降低，同时保持了4.8电子伏特的宽带隙特性。此外，霍尔效应测试表明，锡掺杂氧化镓薄膜的电阻率大幅降低，对于2.5原子百分比的Sn:GaO，其电阻率从4.2×10Ω·cm降至2×10Ω·cm，而名义上未掺杂的氧化镓薄膜电阻率为4.2×10Ω·cm 。
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