Chen Shengyao, Jin Jiyou, Wang Wenxiang, Wang Shu, Du Xiaoshan, Wang Feng, Ma Lijun, Wang Junqi, Wang Cong, Zhang Xinzheng, Liu Qian
MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, School of Physics, Nankai University, Tianjin 300457, China.
CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China.
Phys Chem Chem Phys. 2024 Sep 11;26(35):23438-23446. doi: 10.1039/d4cp02937b.
Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer AsP and PdSe, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage () of -3 V and a peak-to-valley ratio (PVR) close to 8 × 10, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼10) and a large (∼-16 V) are obtained, while a PVR exceeding 10 has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.
二维材料及其范德华异质结构因其独特的光子和电子特性，已成为构建各种创新电子器件的研究焦点。其中，以其独特的非线性电学行为为特征的反双极性器件，作为新型多功能组件受到关注，使其成为构建多态逻辑器件的潜在竞争者。利用少层砷化磷（AsP）和硒化钯（PdSe）的特性，我们构建了一种反双极性异质结器件。在300 K时，该器件的峰值电压（）为-3 V，峰谷比（PVR）接近8×10，且PVR可通过偏置电压进行调制。此外，通过表征80 K至330 K不同温度下的反双极性特性，我们阐明了该器件的热可调特性。在330 K时，获得了一定的PVR（约为10）和较大的（约为-16 V），而在80 K时实现了超过10的PVR。这种与温度相关的灵敏度使该器件在各种应用中具有巨大潜力和热可调性。
