Wu Enxiu, Xie Yuan, Liu Qingzhou, Hu Xiaodong, Liu Jing, Zhang Daihua, Zhou Chongwu
State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering , Tianjin University , No. 92 Weijin Road , Tianjin , 300072 , China.
Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States.
ACS Nano. 2019 May 28;13(5):5430-5438. doi: 10.1021/acsnano.9b00201. Epub 2019 Apr 15.
van der Waals (vdW) p-n heterojunctions formed by two-dimensional nanomaterials exhibit many physical properties and deliver functionalities to enable future electronic and optoelectronic devices. In this report, we demonstrate a tunable and high-performance anti-ambipolar transistor based on MoTe/MoS heterojunction through in situ photoinduced doping. The device demonstrates a high on/off ratio of 10 with a large on-state current of several micro-amps. The peak position of the drain-source current in the transfer curve can be adjusted through the doping level across a large dynamic range. In addition, we have fabricated a tunable multivalue inverter based on the heterojunction that demonstrates precise control over its output logic states and window of midlogic through source-drain bias adjustment. The heterojunction also exhibits excellent photodetection and photovoltaic performances. Dynamic and precise modulation of the anti-ambipolar transport properties may inspire functional devices and applications of two-dimensional nanomaterials and their heterostructures of various kinds.
由二维纳米材料形成的范德华（vdW）p-n异质结展现出许多物理特性，并具备实现未来电子和光电器件功能的能力。在本报告中，我们通过原位光致掺杂展示了一种基于MoTe/MoS异质结的可调谐高性能反双极性晶体管。该器件具有高达10的开/关比，导通状态电流可达数微安。转移曲线中漏源电流的峰值位置可通过掺杂水平在很大的动态范围内进行调节。此外，我们基于该异质结制造了一种可调谐多值逆变器，通过源漏偏置调整可精确控制其输出逻辑状态和中间逻辑窗口。该异质结还展现出优异的光电探测和光伏性能。反双极性传输特性的动态精确调制可能会激发二维纳米材料及其各种异质结构的功能器件及应用。
