Hasach Ghaith A, Al-Salman Husam S
Department of Physics, College of Science, Basrah University, Basrah, Iraq.
The General in Directorate of Education in Al-Diwaniyah, Ministry of Education-AL- Qadisiya, Al-Diwaniyah, Iraq.
J Fluoresc. 2024 Sep 2. doi: 10.1007/s10895-024-03918-z.
Understanding the development and performance of UV photodetectors is crucial, given their extensive applications in both military and civilian sectors. The evolution of self-powered photodetectors, especially those based on heterojunction nanostructures, has demonstrated significant potential for enhancing both device efficiency and functionality. By exploring the effects of material composition and structural design, can optimize these devices for improved photoelectric response and energy efficiency. In this study, we prepared the CuO/ZnO NRs heterojunction photodetector on an ITO substrate to enhance photoelectric response of UV detectors. The fabrication process utilized the hydrothermal method and the spin coating technique. The effect of CuO concentration on the optical response of the photodetector under UV radiation at wavelengths of 405 nm and 385 nm was investigated. The samples were characterized using FESSEM, XRD, EDX, and UV-Vis spectra. The device is further distinguished by its standard I-V curves and photocurrent-time curves, which demonstrate the device's behavior under various light conditions. The prepared thin films are polycrystalline, with CuO layers displaying monoclinic phases and ZnO layers exhibiting a hexagonal wurtzite phase. All samples have the potential to exhibit photovoltaic properties and self-powered capabilities. Furthermore, the I-V curve confirms that the photocurrent mechanism of these junctions adheres to the recombination standard, in addition to demonstrating correction behavior. A sample with a CuO concentration of 0.1 M shows the highest photosensitivity, reaching 340,700%, and a photocurrent gain (Iph/Idark) of 3,408 when exposed to light irradiation at 405 nm. Additionally, it exhibits a rapid response time of 0.8 s.
鉴于紫外线光电探测器在军事和民用领域的广泛应用，了解其发展和性能至关重要。自供电光电探测器的发展，尤其是基于异质结纳米结构的探测器，已显示出在提高器件效率和功能方面的巨大潜力。通过探索材料成分和结构设计的影响，可以优化这些器件以改善光电响应和能量效率。在本研究中，我们在ITO衬底上制备了CuO/ZnO纳米棒异质结光电探测器，以增强紫外线探测器的光电响应。制造过程采用了水热法和旋涂技术。研究了CuO浓度对探测器在405nm和385nm波长紫外线辐射下光学响应的影响。使用场发射扫描电子显微镜（FESSEM）、X射线衍射（XRD）、能谱仪（EDX）和紫外可见光谱对样品进行了表征。该器件还通过其标准的电流-电压（I-V）曲线和光电流-时间曲线进一步区分，这些曲线展示了器件在各种光照条件下的行为。制备的薄膜是多晶的，CuO层显示单斜相，ZnO层呈现六方纤锌矿相。所有样品都有表现出光伏特性和自供电能力的潜力。此外，I-V曲线证实这些结的光电流机制除了表现出校正行为外还符合复合标准。当在405nm波长的光照下时，CuO浓度为0.1M的样品显示出最高的光敏性，达到340700%，光电流增益（Iph/Idark）为3408。此外，它还表现出0.8秒的快速响应时间。
