Han Xiaoqi, Jiang Hongzhu, Mu Pengzhou, Zhang Wenjun, Zhang Huanrui, Xu Gaojie, Chen Zheng, Han Pengxian, Cui Guanglei
Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China.
Shandong Energy Institute, Qingdao, 266101, P. R.China.
Angew Chem Int Ed Engl. 2025 Jan 2;64(1):e202412753. doi: 10.1002/anie.202412753. Epub 2024 Oct 25.
High-voltage dual ion battery (DIB) is promising for stationary energy storage applications owing to its cost-effectiveness, which has been a hot topic of research in rechargeable battery fields. However, it still suffers from rapid battery failure caused by the severe solvent co-intercalation and electrolyte oxidation. To address these bottlenecks, herein a functional electrolyte additive hexafluoroglutaric anhydride (HFGA) is presented based on a Helmholtz plane regulation strategy. It is demonstrated that the HFGA can precisely enter into the Helmholtz plane and positively regulate anion solvation behaviors near the graphite electrode surface owing to its considerable H-F affinity with ethyl methyl carbonate (EMC), thus alleviating EMC-related co-intercalation and oxidation decomposition during DIB charging. Meanwhile, HFGA can copolymerize with the presence of PF at the Helmholtz plane to participate in forming a CF-rich CEI layer with excellent PF permselectivity, conducive to achieving PF de-solvation and simultaneously suppressing electrolyte oxidation decomposition. By virtue of such beneficial effects, the graphite cathode enables a 5.5 V DIB with a prominent capacity retention of 92 % and a high average Coulombic efficiency exceeding 99 % within 2000 cycles at 5 C, demonstrating significantly enhanced electrochemical reversibility. The Helmholtz plane regulation strategy marks a milestone in advancing DIB technologies.
高压双离子电池(DIB)因其成本效益高,在固定式储能应用方面具有广阔前景,一直是可充电电池领域的研究热点。然而,它仍因严重的溶剂共嵌入和电解质氧化而迅速出现电池故障。为解决这些瓶颈问题,本文基于亥姆霍兹平面调控策略提出了一种功能性电解质添加剂六氟戊二酸酐(HFGA)。结果表明,HFGA能够精确进入亥姆霍兹平面,并因其与碳酸甲乙酯(EMC)具有相当的H-F亲和力,在石墨电极表面附近正向调节阴离子溶剂化行为,从而减轻DIB充电过程中与EMC相关的共嵌入和氧化分解。同时,HFGA能在亥姆霍兹平面与PF共存时发生共聚,参与形成具有优异PF选择性透过性的富含CF的CEI层,有利于实现PF去溶剂化并同时抑制电解质氧化分解。凭借这些有益效果,石墨阴极在5 C下2000次循环内能够实现5.5 V的DIB,具有92 %的显著容量保持率和超过99 %的高平均库仑效率,展现出显著增强的电化学可逆性。亥姆霍兹平面调控策略标志着DIB技术发展的一个里程碑。