Bastante Pablo, Pucher Thomas, Castellanos-Gomez Andres
Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid E-28049, Spain.
2D Foundry group. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain.
Nanotechnology. 2024 Sep 17;35(48). doi: 10.1088/1361-6528/ad77dc.
Two-dimensional semiconducting materials such as MoShave gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, one needs to consider the effect of the environment in which the characterization is carried out. Air exposure has a non-negligible impact on the electronic performance and vacuum thermal annealing is an established method to decrease the effects of adsorbates. Nevertheless, when measurements are performed in ambient conditions these effects arise again. In this work, we study the changes in the electrical and optoelectronic properties of single-layer MoS-based devices at air exposure after thermal annealing treatment. Measurements are carried out in anvacuum thermal annealing system, enabling the recording of electrical performance degradation over time. Moreover, this work shows how hexagonal boron nitride (hBN) capping improves device performance, both in vacuum and after venting, as well as stability, by decreasing the degradation speed by around six times. The results suggest that vacuum thermal annealing and hBN capping are methods to mitigate the effects of air environment on these devices.
二维半导体材料，如二硫化钼（MoS），由于其降低的维度以及优异的电学和光电特性，在电子元件的潜在应用中受到了广泛关注。然而，在报告此类基于二维材料的器件性能时，需要考虑进行表征所处环境的影响。空气暴露对电子性能有着不可忽视的影响，而真空热退火是一种降低吸附物影响的既定方法。尽管如此，当在环境条件下进行测量时，这些影响又会再次出现。在这项工作中，我们研究了经过热退火处理后，单层二硫化钼基器件在空气暴露下电学和光电特性的变化。测量在真空热退火系统中进行，能够记录电学性能随时间的退化情况。此外，这项工作还展示了六方氮化硼（hBN）盖帽如何在真空和排气后提高器件性能以及稳定性，其通过将退化速度降低约六倍来实现。结果表明，真空热退火和hBN盖帽是减轻空气环境对这些器件影响的方法。
