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通过真空退火实现Ag(111)/Ge(111)上氧化锗烯向锗烯的转变

Germanene Reformation from Oxidized Germanene on Ag(111)/Ge(111) by Vacuum Annealing.

作者信息

Suzuki Seiya, Katsube Daiki, Yano Masahiro, Tsuda Yasutaka, Terasawa Tomo-O, Ozawa Takahiro, Fukutani Katsuyuki, Kim Yousoo, Asaoka Hidehito, Yuhara Junji, Yoshigoe Akitaka

机构信息

Advanced Science Research Center (ASRC), Japan Atomic Energy Agency (JAEA), 2-4 Shirakata, Tokai-mura, Naka-gun, Ibaraki, 319-1195, Japan.

Cluster for Pioneering Research, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan.

出版信息

Small Methods. 2025 Mar;9(3):e2400863. doi: 10.1002/smtd.202400863. Epub 2024 Sep 9.

Abstract

For group 14 mono-elemental 2D materials, such as silicene, germanene, and stanene, oxidation is a severe problem that alters or degrades their physical properties. This study shows that the oxidized germanene on Ag(111)/Ge(111) can be reformed to germanene by simple heating ≈500 °C in a vacuum. The key reaction in reforming germanene is the desorption of GeO and GeO during heating ≈350 °C. After removing surface oxygen, Ge further segregates to the surface, resulting in the reformation of germanene. The reformed germanene has the same crystal structure, a (7√7 × 7√7) R19.1° supercell with respect to Ag(111), and has equivalent high quality to that of as-grown germanene on Ag(111)/Ge(111). Even after air oxidation, germanene can be reformed by annealing in a vacuum. On the other hand, the desorption of GeO and GeO at high temperatures is not suppressed in the O backfilling atmosphere. This instability of oxidized germanene/Ag(111)/Ge(111) at high temperatures contributes to the ease of germanene reformation without residual oxygen. In other words, the present germanene reformation, as well as the segregation of germanene on Ag(111)/Ge(111), is a highly robust process to synthesize germanene.

摘要

对于第14族单元素二维材料,如硅烯、锗烯和锡烯,氧化是一个严重的问题,会改变或降低它们的物理性质。本研究表明,Ag(111)/Ge(111)上的氧化锗烯在真空中约500°C简单加热即可重新形成锗烯。重新形成锗烯的关键反应是在约350°C加热过程中GeO和GeO的解吸。去除表面氧后,Ge进一步偏析到表面,导致锗烯的重新形成。重新形成的锗烯具有相同的晶体结构,相对于Ag(111)为(7√7 × 7√7) R19.1°超胞,并且与在Ag(111)/Ge(111)上生长的锗烯具有同等的高质量。即使经过空气氧化,锗烯也可以通过在真空中退火重新形成。另一方面,在O回填气氛中高温下GeO和GeO的解吸不会受到抑制。氧化锗烯/Ag(111)/Ge(111)在高温下的这种不稳定性有助于锗烯在无残余氧的情况下轻松重新形成。换句话说,目前的锗烯重新形成以及锗烯在Ag(111)/Ge(111)上的偏析是合成锗烯的一个高度稳健的过程。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/514c/11926502/f80bb0e91993/SMTD-9-2400863-g006.jpg

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