Nagahama T, Yuasa S, Tamura E, Suzuki Y
NanoElectronics Research Institute, AIST, Tsukuba Central 2 Umezono 1-1 Tsukuba Ibaraki 305-8568, Japan.
Phys Rev Lett. 2005 Aug 19;95(8):086602. doi: 10.1103/PhysRevLett.95.086602. Epub 2005 Aug 15.
The tunnel magnetoresistance effect (TMR), which is intrinsically determined by the interface monolayer of an electrode, was realized by using magnetic tunnel junctions (MTJs) with a single-crystal Cr(001) layer inserted between a tunnel barrier and an electrode. The MTJs showed an oscillation of the TMR ratio as a function of the thickness of the Cr(001) layer with a period of 2 monatomic layers, which corresponds to the layered antiferromagnetic structure of Cr(001). These oscillations originate from electron scattering at the interface, due to the mismatching of the symmetry of the wave functions and band structure in Cr(001).
隧道磁电阻效应（TMR）本质上由电极的界面单分子层决定，通过使用在隧道势垒和电极之间插入单晶Cr(001)层的磁性隧道结（MTJ）得以实现。MTJ的TMR比率随Cr(001)层厚度呈振荡变化，周期为2个单原子层，这与Cr(001)的层状反铁磁结构相对应。这些振荡源于界面处的电子散射，这是由于Cr(001)中波函数和能带结构的对称性不匹配所致。
