Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure.
作者信息
Mu Lei, Xing Qiaoxia, Mou Yanlin, Ma Junwei, Wang Chong, Zhang Jiasheng, Ma Yixuan, Lei Yuchen, Xie Yuangang, Yu Boyang, Pan Chenghao, Huang Shenyang, Yan Hugen
机构信息
State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China.
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.
出版信息
Nano Lett. 2024 Sep 25;24(38):11808-11813. doi: 10.1021/acs.nanolett.4c02035. Epub 2024 Sep 11.
The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moiré potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.
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