Mu Lei, Xing Qiaoxia, Mou Yanlin, Ma Junwei, Wang Chong, Zhang Jiasheng, Ma Yixuan, Lei Yuchen, Xie Yuangang, Yu Boyang, Pan Chenghao, Huang Shenyang, Yan Hugen
State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China.
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.
Nano Lett. 2024 Sep 25;24(38):11808-11813. doi: 10.1021/acs.nanolett.4c02035. Epub 2024 Sep 11.
The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moiré potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.
层间电子耦合导致了从单层石墨烯到石墨的电子结构演变，以及扭曲双层石墨烯中的莫尔势。在此，我们证明，在约3.5 GPa的适度压力下，层间转移积分（跳跃参数）增加了近40%，这在所有2-10层石墨烯的红外光谱共振峰位移中得到体现。一个基于莫尔斯势的简单模型使我们能够建立转移积分与压力之间的关系。我们的工作为电子耦合对层间距离的依赖性提供了基本见解。
