Kim Dong-Jun, Kim Kyoung-Whan, Lee Kyusup, Oh Jung Hyun, Chen Xinhou, Yang Shuhan, Pu Yuchen, Liu Yakun, Hu Fanrui, Cao Van Phuoc, Jeong Jong-Ryul, Lee Kyung-Jin, Yang Hyunsoo
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
Center for Spintronics, Korea Institute of Science and Technology, Seoul, Republic of Korea.
Nat Mater. 2024 Nov;23(11):1509-1514. doi: 10.1038/s41563-024-02000-0. Epub 2024 Sep 12.
Magnetoresistance is a fundamental transport phenomenon that is essential for reading the magnetic states for various information storage, innovative computing and sensor devices. Recent studies have expanded the scope of magnetoresistances to the nonlinear regime, such as a bilinear magnetoelectric resistance (BMER), which is proportional to both electric field and magnetic field. Here we demonstrate that the BMER is a general phenomenon that arises even in three-dimensional systems without explicit momentum-space spin textures. Our theory suggests that the spin Hall effect enables the BMER provided that the magnitudes of spin accumulation at the top and bottom interfaces are not identical. The sign of the BMER follows the sign of the spin Hall effect of heavy metals, thereby evidencing that the BMER originates from the bulk spin Hall effect. Our observation suggests that the BMER serves as a general nonlinear transport characteristic in three-dimensional systems, especially playing a crucial role in antiferromagnetic spintronics.
磁电阻是一种基本的输运现象，对于读取各种信息存储、创新计算和传感设备的磁状态至关重要。最近的研究已将磁电阻的范围扩展到非线性区域，例如双线性磁电电阻（BMER），它与电场和磁场都成正比。在这里，我们证明了BMER是一种普遍现象，即使在没有明确动量空间自旋纹理的三维系统中也会出现。我们的理论表明，只要顶部和底部界面处的自旋积累量不相同，自旋霍尔效应就能产生BMER。BMER的符号与重金属的自旋霍尔效应符号一致，从而证明BMER起源于体自旋霍尔效应。我们的观察表明，BMER是三维系统中的一种普遍非线性输运特性，尤其在反铁磁自旋电子学中起着关键作用。
