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带有烷基噻吩侧链的氟化聚噻吩提高宽带隙钙钛矿太阳能电池性能

Fluorinated Polythiophenes with Alkylthiophene Side Chains Boosting the Performance of Wide Bandgap Perovskite Solar Cells.

作者信息

Li Dewang, He Jun, Zhu Guangming, Zhang Zhenhu, He Jiangting, Li Miaomiao, Zhang Fei, Geng Yanhou

机构信息

Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China.

School of Materials Science and Engineering, and Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, Tianjin 300350, China.

出版信息

ACS Appl Mater Interfaces. 2024 Sep 25;16(38):50990-50999. doi: 10.1021/acsami.4c13467. Epub 2024 Sep 12.

Abstract

Wide bandgap (WBG) perovskite solar cells (PSCs) provide their merit of high voltage output but are faced with the overdeepened valence band and the notorious phase segregation. Herein, two alkylthiophene-substituted polythiophenes (PT4T-0F and PT4T-2F) are applied as the interfacial layer for the WBG (1.72 eV) PSCs. Compared with PT4T-0F, PT4T-2F with fluoride (F) on thiophene units in a conjugated backbone exhibits more planar configuration, higher hole mobility, and deeper highest occupied molecular orbital energy. By using PT4T-2F as an additive in antisolvent, crystal growth of FACsPb(IBr) is successfully mediated, resulting in high ratio (100) plane exposure of the WBG perovskites, and defect passivation is simultaneously realized. The optimized device presents a high open-circuit voltage of 1.23 V and a power conversion efficiency of 19.20%. The long-term stabilities under moisture and thermal conditions are both improved. This work offers an ideal interlayer material for WBG PSC engineering and further provides a simple process to integrate simultaneous crystal mediation and interface optimization.

摘要

宽带隙(WBG)钙钛矿太阳能电池(PSC)具有高电压输出的优点,但面临价带过深和臭名昭著的相分离问题。在此,两种烷基噻吩取代的聚噻吩(PT4T-0F和PT4T-2F)被用作WBG(1.72 eV)PSC的界面层。与PT4T-0F相比,在共轭主链的噻吩单元上带有氟(F)的PT4T-2F表现出更平面的构型、更高的空穴迁移率和更深的最高占据分子轨道能量。通过在反溶剂中使用PT4T-2F作为添加剂,成功介导了FACsPb(IBr)的晶体生长,导致WBG钙钛矿的(100)面高比例暴露,同时实现了缺陷钝化。优化后的器件呈现出1.23 V的高开路电压和19.20%的功率转换效率。在湿度和热条件下的长期稳定性均得到提高。这项工作为WBG PSC工程提供了一种理想的夹层材料,并进一步提供了一种同时整合晶体介导和界面优化的简单工艺。

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