Murawski Krzysztof, Majkowycz Kinga, Kopytko Małgorzata, Manyk Tetiana, Dąbrowski Karol, Seredyński Bartłomiej, Kubiszyn Łukasz, Martyniuk Piotr
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908 Warsaw, Poland.
VIGO Photonics S.A., 129/133 Poznańska Street, 05-850 Ożarów Mazowiecki, Poland.
Nanomaterials (Basel). 2024 Aug 26;14(17):1393. doi: 10.3390/nano14171393.
The long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs) and a gallium-free ("Ga-free") InAs/InAsSb (x = 0.39) absorber was characterized by photoluminescence (PL) and spectral response (SR) methods. Heterostructures were grown by molecular beam epitaxy (MBE) on a GaAs substrate (001) orientation. The crystallographic quality was confirmed by high-resolution X-Ray diffraction (HRXRD). Two independent methods, combined with theoretical calculations, were able to determine the transitions between the superlattice minibands. Moreover, transitions from the trap states were determined. Studies of the PL intensity as a function of the excitation laser power allowed the identification of optical transitions. The determined effective energy gap (E) of the tested absorber layer was 116 meV at 300 K. The transition from the first light hole miniband to the first electron miniband was red-shifted by 76 meV. The detected defects' energy states were constant versus temperature. Their values were 85 meV and 112 meV, respectively. Moreover, two additional transitions from acceptor levels in cryogenic temperature were determined by being shifted from blue to E by 6 meV and 16 meV, respectively.
采用光致发光（PL）和光谱响应（SR）方法对具有II型超晶格（T2SL）和无镓（“无Ga”）InAs/InAsSb（x = 0.39）吸收体的长波红外（LWIR）带间级联探测器进行了表征。通过分子束外延（MBE）在GaAs衬底（001）取向上生长异质结构。通过高分辨率X射线衍射（HRXRD）确认了晶体质量。两种独立的方法与理论计算相结合，能够确定超晶格微带之间的跃迁。此外，还确定了陷阱态的跃迁。对PL强度作为激发激光功率的函数进行研究，从而识别出光学跃迁。在300 K时，测试吸收层的确定有效能隙（E）为116 meV。从第一轻空穴微带到第一电子微带的跃迁发生了76 meV的红移。检测到的缺陷能态随温度保持恒定。它们的值分别为85 meV和112 meV。此外，在低温下从受主能级还确定了另外两个跃迁，分别从蓝光向E发生了6 meV和16 meV的位移。
