Marchewka Michał, Jarosz Dawid, Ruszała Marta, Juś Anna, Krzemiński Piotr, Płoch Dariusz, Maś Kinga, Wojnarowska-Nowak Renata
Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, Al. Rejtana 16, 35-959 Rzeszów, Poland.
International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland.
Materials (Basel). 2023 Feb 28;16(5):1968. doi: 10.3390/ma16051968.
We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and improved surface quality. The minimal strain T2SL versus GaSb substrate can be achieved by a special shutters sequence during MBE growth that leads to the formation of both interfaces. The obtained minimal mismatches of the lattice constants is smaller than that reported in the literature. The in-plane compressive strain of 60-period InAs/AlSb T2SL 7ML/6ML and 6ML/5ML was completely balanced by the applied IFs, which is confirmed by the HRXRD measurements. The results of the Raman spectroscopy (measured along the direction of growth) and surface analyses (AFM and Nomarski microscopy) of the investigated structures are also presented. Such InAs/AlSb T2SL can be used as material for a detector in the MIR range and, e.g., as a bottom n-contact layer as a relaxation region for a tuned interband cascade infrared photodetector.
我们展示了在GaSb衬底上生长的应变平衡InAs/AlSb II型超晶格（T2SL），采用了两种界面（IF）：类AlAs界面和类InSb界面。这些结构通过分子束外延（MBE）获得，以实现有效的应变管理、简化生长方案、提高材料晶体质量和改善表面质量。通过MBE生长过程中的特殊快门序列可以实现与GaSb衬底的最小应变T2SL，该序列会导致两种界面的形成。所获得的晶格常数最小失配小于文献报道的值。60周期InAs/AlSb T2SL 7ML/6ML和6ML/5ML的面内压缩应变通过应用的界面完全平衡，这通过高分辨率X射线衍射（HRXRD）测量得到证实。还展示了所研究结构的拉曼光谱（沿生长方向测量）和表面分析（原子力显微镜和诺马斯基显微镜）结果。这种InAs/AlSb T2SL可作为中红外（MIR）范围探测器的材料，例如，作为底部n接触层，作为调谐带间级联红外光电探测器的弛豫区域。
