Li Haobin, Li Fu, Chen Yuexing, Liang Guangxing, Luo Jingting, Wei Meng, Zheng Zhi, Zheng Zhuanghao
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Key Laboratory for Micro-Nano Materials for Energy Storage and Conversion of Henan Province, Institute of Surface Micro and Nano Materials, College of Chemical and Materials Engineering, Xuchang University, Xuchang 461000, China.
Nanomaterials (Basel). 2024 Aug 30;14(17):1421. doi: 10.3390/nano14171421.
CuSe is an attractive thermoelectric material due to its layered structure, low cost, environmental compatibility, and non-toxicity. These traits make it a promising replacement for conventional thermoelectric materials in large-scale applications. This study focuses on preparing CuSe flexible thin films through in situ magnetron sputtering technology while carefully optimizing key preparation parameters, and explores the physical mechanism of thermoelectric property enhancement, especially the power factor. The films are deposited onto flexible polyimide substrates. Experimental findings demonstrate that films grown at a base temperature of 200 °C exhibit favorable performance. Furthermore, annealing heat treatment effectively regulates the Cu element content in the film samples, which reduces carrier concentration and enhances the Seebeck coefficient, ultimately improving the power factor of the materials. Compared to the unannealed samples, the sample annealed at 300 °C exhibited a significant increase in room temperature Seebeck coefficient, rising from 9.13 μVK to 26.73 μVK. Concurrently, the power factor improved from 0.33 μWcmK to 1.43 μWcmK.
硒化铜因其层状结构、低成本、环境兼容性和无毒等特性，是一种极具吸引力的热电材料。这些特性使其成为大规模应用中传统热电材料的有前途的替代品。本研究重点通过原位磁控溅射技术制备硒化铜柔性薄膜，同时仔细优化关键制备参数，并探索热电性能增强的物理机制，特别是功率因数。薄膜沉积在柔性聚酰亚胺基板上。实验结果表明，在200℃的基温下生长的薄膜表现出良好的性能。此外，退火热处理有效地调节了薄膜样品中的铜元素含量，降低了载流子浓度并提高了塞贝克系数，最终提高了材料的功率因数。与未退火样品相比，在300℃退火的样品在室温下的塞贝克系数显著增加，从9.13 μVK升至26.73 μVK。同时，功率因数从0.33 μWcmK提高到1.43 μWcmK。
