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室温下在PVDF-HFP/NiFe双层膜以及Ag/(NiFe或Co)/PVDF-HFP/NiFe自旋阀中跨半结晶PVDF-HFP薄膜的自旋注入研究。

Room temperature spin injection study across semi-crystalline PVDF-HFP thin films in PVDF-HFP/NiFe bilayers and Ag/(NiFe or Co)/PVDF-HFP/NiFe spin valves.

作者信息

Roy Jyotirmoy, Ravi Teja Pajjuru, Sahu Savita, S Devadarsan, Basheed G A, Gangineni R B

机构信息

Functional Thin Films Laboratory, Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University, Kalapet, 605014 Puducherry, India.

CSIR-National Physical Laboratory, Dr K S Krishnan Marg, New Delhi 110012, India.

出版信息

J Phys Condens Matter. 2024 Sep 24;36(50). doi: 10.1088/1361-648X/ad7ac5.

DOI:10.1088/1361-648X/ad7ac5
PMID:39270719
Abstract

Spin injection across 160 nm thick semi-crystalline Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) is methodically investigated at room temperature in PVDF-HFP/NiFe bilayers and Ag/(NiFe or Co)/PVDF-HFP/NiFe vertical organic spin valves (OSVs) using both the co-planar waveguide ferromagnetic resonance (CPW-FMR: 7-35 GHz) and magnetoresistance (MR) techniques. The structural and microstructural characteristics of PVDF-HFP reveal the formation of mixed non-ferroelectric alpha and ferroelectric beta phases. The spin injection due to the transfer of angular momentum in PVDF-HFP/NiFe is quantified by measuring the spin-mixing conductance () and the enhancement in Gilbert damping () parameters from CPW-FMR data. A significant increase inof 26% andof (2.72 ± 0.45) × 10mhighlights the efficient spin injection into the PVDF-HFP spacer layer. Further, the MR in OSV structures reveals a room temperature spin injection with a maximum MR of 0.278 ± 0.006% for Ag/Co/PVDF-HFP/NiFe and 0.349 ± 0.039% for the Ag/NiFe/PVDF-HFP/NiFe devices. Furthermore, the spin injection processes are discussed w.r.t to bias voltages, interfaces and microwave frequencies.

摘要

在室温下,使用共面波导铁磁共振(CPW-FMR:7 - 35 GHz)和磁阻(MR)技术,系统地研究了在聚偏氟乙烯-六氟丙烯(PVDF-HFP)/镍铁双层膜以及银/(镍铁或钴)/PVDF-HFP/镍铁垂直有机自旋阀(OSV)中,自旋注入穿过160纳米厚的半结晶聚偏氟乙烯-六氟丙烯(PVDF-HFP)的情况。PVDF-HFP的结构和微观结构特征显示出混合的非铁电α相和铁电β相的形成。通过测量自旋混合电导( )以及从CPW-FMR数据中得出的吉尔伯特阻尼( )参数的增强,来量化PVDF-HFP/镍铁中由于角动量转移而产生的自旋注入。 显著增加26%以及 达到(2.72 ± 0.45) × 10 ,突出了向PVDF-HFP间隔层的有效自旋注入。此外,OSV结构中的磁阻显示出室温自旋注入,对于银/钴/PVDF-HFP/镍铁器件,最大磁阻为0.278 ± 0.006%,对于银/镍铁/PVDF-HFP/镍铁器件,最大磁阻为0.349 ± 0.039%。此外,还针对偏置电压、界面和微波频率讨论了自旋注入过程。

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