Yang Huyi, Fu Ming, Zhang Xin, Zhu Kailin, Cao Lei, Hu Chunfeng
Nuclear Power Institute of China, Chengdu 610213, China.
Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China.
Materials (Basel). 2024 Aug 27;17(17):4238. doi: 10.3390/ma17174238.
Polycrystalline silicon carbide (SiC) is a highly valuable material with crucial applications across various industries. Despite its benefits, processing this brittle material efficiently and with high quality presents significant challenges. A thorough understanding of the mechanisms involved in processing and removing SiC is essential for optimizing its production. In this study, we investigated the sawing characteristics and material removal mechanisms of polycrystalline silicon carbide (SiC) ceramic using a diamond wire saw. Experiments were conducted with high wire speeds of 30 m/s and a maximum feed rate of 2.0 mm/min. The coarseness value () increased slightly with the feed rate. Changes in the diamond wire during the grinding process and their effects on the grinding surface were analyzed using scanning electron microscopy (SEM), laser confocal microscopy, and focused ion beam (FIB)-transmission electron microscopy (TEM). The findings provide insights into the grinding mechanisms. The presence of ductile grinding zones and brittle fracture areas on the ground surface reveals that external forces induce dislocation and amorphization within the grain structure, which are key factors in material removal during grinding.
多晶硅碳化硅（SiC）是一种极具价值的材料，在各个行业都有至关重要的应用。尽管它有诸多优点，但高效且高质量地加工这种脆性材料面临着重大挑战。深入了解加工和去除SiC所涉及的机制对于优化其生产至关重要。在本研究中，我们使用金刚石线锯研究了多晶硅碳化硅（SiC）陶瓷的锯切特性和材料去除机制。实验在30 m/s的高线速度和2.0 mm/min的最大进给速度下进行。粗糙度值（）随进给速度略有增加。使用扫描电子显微镜（SEM）、激光共聚焦显微镜和聚焦离子束（FIB）-透射电子显微镜（TEM）分析了磨削过程中金刚石线的变化及其对磨削表面的影响。这些发现为磨削机制提供了见解。磨削表面上韧性磨削区和脆性断裂区域的存在表明，外力会在晶粒结构内引起位错和非晶化，这是磨削过程中材料去除的关键因素。
