Zheng Ruyuan, Yi Yingting, Song Qianju, Yi Zao, Yi Yougen, Cheng Shubo, Zhang Jianguo, Tang Chaojun, Sun Tangyou, Zeng Qingdong
Joint Laboratory for Extreme Conditions Matter Properties, Key Laboratory of Manufacturing Process Testing Technology of Ministry of Education, State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China.
College of Physics and Electronics, Central South University, Changsha 410083, China.
Materials (Basel). 2024 Aug 29;17(17):4287. doi: 10.3390/ma17174287.
In recent years, absorbers related to metamaterials have been heavily investigated. In particular, VO materials have received focused attention, and a large number of researchers have aimed at multilayer structures. This paper presents a new concept of a three-layer simple structure with VO as the base, silicon dioxide as the dielectric layer, and graphene as the top layer. When VO is in the insulated state, the absorber is in the closed state, Δf = 1.18 THz (absorption greater than 0.9); when VO is in the metallic state, the absorber is open, Δf = 4.4 THz (absorption greater than 0.9), with ultra-broadband absorption. As a result of the absorption mode conversion, a phenomenon occurs with this absorber, with total transmission and total reflection occurring at 2.4 THz (A = 99.45% or 0.29%) and 6.5 THz (A = 90% or 0.24%) for different modes. Due to this absorption property, the absorber is able to achieve full-transmission and full-absorption transitions at specific frequencies. The device has great potential for applications in terahertz absorption, terahertz switching, and terahertz modulation.
近年来，与超材料相关的吸收体受到了广泛研究。特别是，VO材料受到了重点关注，大量研究人员致力于多层结构。本文提出了一种以VO为基底、二氧化硅为介电层、石墨烯为顶层的三层简单结构的新概念。当VO处于绝缘状态时，吸收体处于关闭状态，Δf = 1.18太赫兹（吸收率大于0.9）；当VO处于金属状态时，吸收体打开，Δf = 4.4太赫兹（吸收率大于0.9），具有超宽带吸收。由于吸收模式转换，该吸收体出现了一种现象，在不同模式下，在2.4太赫兹（A = 99.45%或0.29%）和6.5太赫兹（A = 90%或0.24%）时分别出现全透射和全反射。由于这种吸收特性，该吸收体能够在特定频率实现全透射和全吸收转变。该器件在太赫兹吸收、太赫兹开关和太赫兹调制方面具有巨大的应用潜力。
