Le Xuan Phu, Venkatesan Annadurai, Daw Debottam, Nguyen Tien Anh, Baithi Mallesh, Bouzid Houcine, Nguyen Tuan Dung
Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
ACS Appl Mater Interfaces. 2024 Oct 2;16(39):52645-52652. doi: 10.1021/acsami.4c10249. Epub 2024 Sep 17.
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs), such as tungsten diselenide (WSe), hold immense potential for applications in electronic and optoelectronic devices. However, a significant Schottky barrier height (SBH) at the metal-semiconductor (MS) interface reduces the electronic device performance. Here, we present a unique 2D/2D contact method for minimizing contact resistance and reducing the SBH. This approach utilizes vanadium-doped WSe (V-WSe) as the drain and source contacts. The fabricated transistor exhibited a stable operation with p-type quasi-ohmic contact and a high on/off current ratio surpassing 10 at room temperature, reaching 10 at 10 K. The device achieved an on-current of 68.87 μA, a high mobility of 103.80 cm V s, a low contact resistance of 0.92 kΩ, and remarkably low SBH values of 1.51 meV for holes at = -120 V with fixed = 1 V. Furthermore, a Schottky photodiode has been fabricated, utilizing V-WSe and Cr as the asymmetric contact platform, showing a responsivity of 116 mA W. The findings of this study suggest a simple and efficient method for improving the performance of TMDC-based transistors.
二维（2D）过渡金属二硫属化物（TMDCs），如二硒化钨（WSe），在电子和光电器件应用中具有巨大潜力。然而，金属-半导体（MS）界面处显著的肖特基势垒高度（SBH）降低了电子器件性能。在此，我们提出一种独特的二维/二维接触方法，以最小化接触电阻并降低SBH。该方法利用钒掺杂的WSe（V-WSe）作为漏极和源极接触。所制备的晶体管在室温下表现出具有p型准欧姆接触的稳定操作以及超过10的高开/关电流比，在10 K时达到10。该器件实现了68.87 μA的导通电流、103.80 cm² V⁻¹ s⁻¹的高迁移率、0.92 kΩ的低接触电阻以及在固定栅极电压Vg = 1 V且漏极电压Vd = -120 V时空穴的1.51 meV的极低SBH值。此外，利用V-WSe和Cr作为不对称接触平台制备了肖特基光电二极管，其响应度为116 mA W⁻¹。本研究结果表明了一种用于提高基于TMDC的晶体管性能的简单有效方法。
