Maldonado D, Baroni A, Aldana S, Dorai Swamy Reddy K, Pechmann S, Wenger C, Roldán J B, Pérez E
IHP-Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany.
Tyndall National Institute, Lee Maltings Complex Dyke Parade, Cork, Cork, T12 R5CP, Ireland.
Nanoscale. 2024 Oct 17;16(40):19021-19033. doi: 10.1039/d4nr02975e.
The drift characteristics of valence change memory (VCM) devices have been analyzed through both experimental analysis and 3D kinetic Monte Carlo (kMC) simulations. By simulating six distinct low-resistance states (LRS) over a 24-hour period at room temperature, we aim to assess the device temporal stability and retention. Our results demonstrate the feasibility of multi-level operation and reveal insights into the conductive filament (CF) dynamics. The cumulative distribution functions (CDFs) of read-out currents measured at different time intervals provide a comprehensive view of the device performance for the different conductance levels. These findings not only enhance the understanding of VCM device switching behaviour but also allow the development of strategies for improving retention, thereby advancing the development of reliable nonvolatile resistive switching memory technologies.
通过实验分析和三维动力学蒙特卡罗（kMC）模拟，对价变存储器（VCM）器件的漂移特性进行了分析。通过在室温下24小时内模拟六种不同的低电阻状态（LRS），我们旨在评估器件的时间稳定性和保持性。我们的结果证明了多级操作的可行性，并揭示了对导电细丝（CF）动力学的见解。在不同时间间隔测量的读出电流的累积分布函数（CDF）提供了不同电导水平下器件性能的全面视图。这些发现不仅增进了对价变存储器器件开关行为的理解，还为提高保持性的策略制定提供了可能，从而推动了可靠的非易失性电阻式开关存储器技术的发展。
