Chhaperwal Mayank, Tongale Himanshu Madhukar, Hays Patrick, Watanabe Kenji, Taniguchi Takashi, Tongay Seth Ariel, Majumdar Kausik
Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India.
Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States.
Nano Lett. 2024 Oct 9;24(40):12461-12468. doi: 10.1021/acs.nanolett.4c03168. Epub 2024 Sep 25.
A monolayer semiconductor transferred on nanopillar arrays provides site-controlled, on-chip single photon emission, which is a scalable light source platform for quantum technologies. However, the brightness of these emitters reported to date often falls short of the perceived requirement for such applications. Also, the single photon purity usually degrades as the brightness increases. Hence, there is a need for a design methodology to achieve an enhanced emission rate while maintaining high single photon purity. By using WSe on high-aspect-ratio (∼3, at least 2-fold higher than previous reports) nanopillar arrays, here we demonstrate >10 MHz single photon emission rate in the 770-800 nm band that is compatible with quantum memory and repeater networks (Rb-87-D1/D2 lines) and satellite quantum communication. The emitters exhibit excellent purity (even at high emission rates) and improved out-coupling due to the use of a gold back reflector that quenches the emission away from the nanopillar.
转移到纳米柱阵列上的单层半导体可实现位点控制的片上单光子发射，这是一种用于量子技术的可扩展光源平台。然而，迄今为止报道的这些发射器的亮度往往未达到此类应用的预期要求。此外，单光子纯度通常会随着亮度的增加而降低。因此，需要一种设计方法来在保持高单光子纯度的同时提高发射率。通过在高纵横比（约为3，至少比先前报道高2倍）的纳米柱阵列上使用WSe，我们在此展示了在770 - 800 nm波段中大于10 MHz的单光子发射率，该发射率与量子存储器和中继器网络（Rb - 87 - D1/D2线）以及卫星量子通信兼容。由于使用了金背反射器来抑制纳米柱外的发射，这些发射器表现出优异的纯度（即使在高发射率下）并改善了外耦合。
