Behera Saraswati
Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE 41296 Göteborg, Sweden.
Nanotechnology. 2024 Oct 8;35(50). doi: 10.1088/1361-6528/ad7f5e.
In this article, we present simple, cost-effective, passive (non-gated) electronic devices based on single-layer (SL) chemical vapor deposited (CVD) graphene that show nonlinear and asymmetric current-voltage characteristics (CVCs) at ambient temperatures. AlO-Ti-Au contacts to graphene results in a nonlinear resistance to achieve nonlinearity in the CVC. Upon transfer to polyethylene terephthalate, the CVD-grown SL graphene shows mobility of 6200 cmVS. We have observed both thermoelectric effect and thermoresistive sensing in the fabricated devices such as voltage and temperature concerning change in electronic power and resistance through asymmetric and nonlinear CVC. The device is stable both at low and high voltages (±200 mV to ±4 V) and temperatures (4 K - 300 K). Graphene-based thermosensing devices can be ultra-thin, cost-effective, non-toxic/organic, flexible, and high-speed for integration into future complementary metal-oxide semiconductor (CMOS) interface, and wearable self-power electronics. A strong negative temeperature coefficent of resistance is demonstrated in the realized nonlinear graphene-integrated resistors for its application in NTC thermistors.
在本文中，我们展示了基于单层化学气相沉积（CVD）石墨烯的简单、经济高效的无源（非门控）电子器件，这些器件在环境温度下呈现非线性和不对称的电流-电压特性（CVC）。石墨烯与AlO-Ti-Au的接触导致非线性电阻，从而在CVC中实现非线性。转移到聚对苯二甲酸乙二酯上后，CVD生长的单层石墨烯显示出6200 cm²V⁻¹s⁻¹的迁移率。我们在制造的器件中观察到了热电效应和热阻传感，例如通过不对称和非线性CVC，电子功率和电阻的变化与电压和温度有关。该器件在低电压和高电压（±200 mV至±4 V）以及温度（4 K - 300 K）下均稳定。基于石墨烯的热传感器件可以超薄、经济高效、无毒/有机、灵活且高速，以便集成到未来的互补金属氧化物半导体（CMOS）接口和可穿戴自供电电子设备中。在实现的非线性石墨烯集成电阻器中展示了很强的负电阻温度系数，可用于负温度系数热敏电阻。
