Liu Ming, Guo Muchun, Lyu Haiyan, Lai Yingda, Zhu Yuke, Guo Fengkai, Yang Yueyang, Yu Kuai, Dong Xingyan, Liu Zihang, Cai Wei, Wuttig Matthias, Yu Yuan, Sui Jiehe
National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, China.
Institute of Physics (IA), RWTH Aachen University, Aachen, Germany.
Nat Commun. 2024 Sep 27;15(1):8286. doi: 10.1038/s41467-024-52645-3.
Metavalent bonding is a unique bonding mechanism responsible for exceptional properties of materials used in thermoelectric, phase-change, and optoelectronic devices. For thermoelectrics, the desired performance of metavalently bonded materials can be tuned by doping foreign atoms. Incorporating dopants to form solid solutions or second phases is a crucial route to tailor the charge and phonon transport. Yet, it is difficult to predict if dopants will form a secondary phase or a solid solution, which hinders the tailoring of microstructures and material properties. Here, we propose that the solid solution is more easily formed between metavalently bonded solids, while precipitates prefer to exist in systems mixed by metavalently bonded and other bonding mechanisms. We demonstrate this in a metavalently bonded GeTe compound alloyed with different sulfides. We find that S can dissolve in the GeTe matrix when alloyed with metavalently bonded PbS. In contrast, S-rich second phases are omnipresent via alloying with covalently bonded GeS and SnS. Benefiting from the reduced phonon propagation and the optimized electrical transport properties upon doping PbS in GeTe, a high figure-of-merit ZT of 2.2 at 773 K in (GeSbTe)(PbSe)(PbS) is realized. This strategy can be applied to other metavalently bonded materials to design properties beyond thermoelectrics.
变价键合是一种独特的键合机制,它赋予了用于热电、相变和光电器件的材料优异性能。对于热电材料,通过掺杂外来原子可以调节变价键合材料的理想性能。引入掺杂剂以形成固溶体或第二相是调整电荷和声子输运的关键途径。然而,很难预测掺杂剂会形成第二相还是固溶体,这阻碍了微观结构和材料性能的调整。在此,我们提出,在变价键合的固体之间更容易形成固溶体,而析出物更倾向于存在于由变价键合和其他键合机制混合的体系中。我们在与不同硫化物合金化的变价键合GeTe化合物中证明了这一点。我们发现,当与变价键合的PbS合金化时,S可以溶解在GeTe基体中。相反,通过与共价键合的GeS和SnS合金化,富含S的第二相无处不在。得益于在GeTe中掺杂PbS后声子传播的减少和电输运性能的优化, (GeSbTe)(PbSe)(PbS)在773 K时实现了高达2.2的优值ZT。这种策略可应用于其他变价键合材料,以设计超越热电性能的特性。