Sun Yixiao, Cheng Jie, Luo Zhizhong, Zeng Yanhan
School of Electronics and Communication Engineering, Guangzhou University, Guangzhou 510006, China.
Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Guangzhou University, Guangzhou 510006, China.
Micromachines (Basel). 2024 Sep 6;15(9):1132. doi: 10.3390/mi15091132.
A high resolution, acceptable accuracy and low power consumption time-domain temperature sensor is proposed and simulated in this paper based on a 180 nm standard CMOS technology. A diode stacking structure is introduced to enhance the accuracy of the temperature sensing core. To improve the resolution of the sensor, a dual-input capacitor multiplexing voltage-to-time converter (VTC) is implemented. Additionally, a low-temperature drift voltage-mode relaxation oscillator (ROSC) is proposed, effectively reducing the large oscillation frequency drift caused by significant temperature impacts on delay errors. The simulated results show that the resolution is as high as 0.0071 °C over 0∼120 °C with +0.43 °C/-0.38 °C inaccuracy and 1.9 pJ · K resolution FoM, consuming only 1.48 μW at a 1.2 V supply voltage.
本文基于180nm标准CMOS技术,提出并模拟了一种高分辨率、可接受精度且低功耗的时域温度传感器。引入二极管堆叠结构以提高温度传感核心的精度。为提高传感器的分辨率,实现了一种双输入电容复用电压-时间转换器(VTC)。此外,还提出了一种低温漂移电压模式弛豫振荡器(ROSC),有效减少了温度对延迟误差的显著影响所导致的大幅振荡频率漂移。模拟结果表明,在0至120°C范围内,分辨率高达0.0071°C,精度为+0.43°C/-0.38°C,分辨率优值为1.9pJ·K,在1.2V电源电压下功耗仅为1.48μW。