Zhang Yupeng, Zhou Ruiheng, Liu Xinyan, Bi Zhengyu, Ruan Shengping, Ma Yan, Li Xin, Liu Caixia, Chen Yu, Zhou Jingran
College of Electronic Science & Engineering, Jilin University, Changchun 130012, China.
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Sensors (Basel). 2024 Jan 25;24(3):787. doi: 10.3390/s24030787.
β-GaO photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InGa)O (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in GaO leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InGa)O can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous InGaO photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 10) and high responsivity (739.2 A/W). This work provides a promising semiconductor material InGaO for high-performance MSM UV photodetectors.
β-GaO光电探测器在紫外探测中具有暗电流低和抗辐射能力强的优点。然而，有限的光电流限制了它们的应用。在此，通过溶胶-凝胶法制备并研究了基于(InGa)O（x = 0、0.1、0.2、0.3）的MSM紫外光电探测器。铟离子在GaO中的掺杂导致晶格畸变并促进氧空位的形成。(InGa)O中的氧空位可通过不同比例的铟进行调制，增加的氧空位有助于提高电子浓度。结果表明，非晶InGaO光电探测器表现出改进的性能，包括高光暗电流比（2.8×10）和高响应度（739.2 A/W）。这项工作为高性能MSM紫外光电探测器提供了一种有前景的半导体材料InGaO。
