Usman Abdullahi, Bovornratanaraks Thiti
International Graduate Program of Nanoscience and Technology, Chulalongkorn University, Bangkok 10330, Thailand.
Extreme Conditions Physics Research Laboratory and Center of Excellence in Physics of Energy Materials (CE:PEM), Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330, Thailand.
ACS Omega. 2024 Sep 12;9(38):39663-39672. doi: 10.1021/acsomega.4c04505. eCollection 2024 Sep 24.
The perovskite device, incorporating a modified nanostructure of TiO as the electron transport layer, has been investigated to enhance its performance compared to the pure TiO device. Various materials undergo electrochemical doping or treatment on TiO to improve their photocatalytic application, thereby enhancing the current density, minimizing recombination, and improving device stability. In this study, a numerical SCAPS simulation was employed to validate experimental findings from the literature. According to the literature, this marks the first instance of doping Al and Mg on TiO due to their ionic radius comparable to that of Ti, at different doping concentrations. The device was modeled and simulated with the experimental parameters of bandgap, series, and shunt resistances for pure TiO, aluminum-doped TiO (Al-TiO), and magnesium-doped TiO (Mg-TiO). From the validated results, the Al-TiO and Mg-TiO-based devices' configurations with minimum percentage errors of 0.427 and 2.771%, respectively, were selected and simulated across nearly 90 (90) configurations to determine the optimum device model. Optimizing absorber thickness, bandgap, doping concentration, metal electrode, as well as series and shunt resistance resulted in enhanced device performance. According to the proposed model, Al-TiO and Mg-TiO configurations achieved higher power conversion efficiency values of 19.260 and 19.860%, respectively. This improvement is attributed to the reduction in recombination rates through the injection of a higher photocurrent density.
采用修饰的TiO纳米结构作为电子传输层的钙钛矿器件,已被研究用于提高其与纯TiO器件相比的性能。各种材料在TiO上进行电化学掺杂或处理以改善其光催化应用,从而提高电流密度、最小化复合并提高器件稳定性。在本研究中,采用数值SCAPS模拟来验证文献中的实验结果。根据文献,由于Al和Mg的离子半径与Ti相当,在不同掺杂浓度下对TiO进行Al和Mg掺杂这是首次。利用纯TiO、铝掺杂TiO(Al-TiO)和镁掺杂TiO(Mg-TiO)的带隙、串联和并联电阻的实验参数对器件进行建模和模拟。从验证结果中,分别选择了最小百分比误差为0.427%和2.771%的基于Al-TiO和Mg-TiO的器件配置,并在近90种配置上进行模拟以确定最佳器件模型。优化吸收体厚度、带隙、掺杂浓度、金属电极以及串联和并联电阻可提高器件性能。根据所提出的模型,Al-TiO和Mg-TiO配置分别实现了更高的功率转换效率值,即19.260%和19.860%。这种改进归因于通过注入更高的光电流密度降低了复合率。