Liu Aimin, Ding Jun, Tan Qiuhong, Yang Peizhi, Liu Yingkai, Wang Qianjin
College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, China.
College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, China; Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, China; Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China.
J Colloid Interface Sci. 2025 Feb;679(Pt A):316-323. doi: 10.1016/j.jcis.2024.09.245. Epub 2024 Sep 30.
Lead-free double perovskite CsAgBiBr has garnered increasing attention in photoelectric applications owing to its good stability and excellent photoelectric properties. However, the poor carrier transport in CsAgBiBr thin films constraints their further application in photodetection. To overcome this issue, we have developed an innovative low-dimensional CsAgBiBr/CdS heterojunction photodetector with substantially improved performance. The device achieved a high responsivity of 6.66 × 10 A/W, an outstanding specific detectivity of 2.10 × 10 Jones, and an impressive external quantum efficiency of 1.88 × 10 %. Additionally, the on/off current ratio of the heterojunction device reached an impressive 6.18 × 10. These key parameters are significantly better than those of most previously reported CsAgBiBr-based photodetectors. Furthermore, scanning photocurrent mapping and band arrangement analysis were performed to elucidate the mechanism of photocurrent generation and transport in the low-dimensional CsAgBiBr/CdS heterojunction photodetectors. This study highlights the outstanding performance of CsAgBiBr/CdS heterojunction and provides a simple and effective strategy for developing high-performance CsAgBiBr-based photodetectors.
无铅双钙钛矿CsAgBiBr因其良好的稳定性和优异的光电性能,在光电应用中受到越来越多的关注。然而,CsAgBiBr薄膜中载流子传输较差,限制了其在光探测中的进一步应用。为克服这一问题,我们开发了一种创新的低维CsAgBiBr/CdS异质结光电探测器,其性能有了显著提高。该器件实现了6.66×10 A/W的高响应度、2.10×10 Jones的出色比探测率以及1.88×10 %的令人印象深刻的外量子效率。此外,异质结器件的开/关电流比达到了令人印象深刻的6.18×10。这些关键参数明显优于大多数先前报道的基于CsAgBiBr的光电探测器。此外,还进行了扫描光电流映射和能带排列分析,以阐明低维CsAgBiBr/CdS异质结光电探测器中光电流产生和传输的机制。本研究突出了CsAgBiBr/CdS异质结的优异性能,并为开发高性能的基于CsAgBiBr的光电探测器提供了一种简单有效的策略。