Wang Caiyun, Liu Ziyue, Xiong Gao
Department of Applied Physics, School of Science, East China JiaoTong University, Nanchang, 330013, Jiangxi, P. R. China.
Sci Rep. 2024 Oct 8;14(1):23388. doi: 10.1038/s41598-024-72999-4.
Significant progress has been made in the field of two-dimensional WS, yet the precise control of the doping process to achieve desired properties and the interpretation of complex physical phenomena in these novel materials necessitate thorough research. In this study, Nb-doped WS is synthesized using chemical vapor deposition technology, leading to triangular flakes with a side length of 12-20 μm. The X-ray photoelectron spectroscopy analysis indicates that the Nb substitution defect functions as an electron acceptor. The interlayer and transverse forces of the Nb-doped WS flake approach 1 nN and 150 pN, respectively. As the doping concentration increases, the valence band maximum energy of Nb-doped WS ranges from 4.06 eV to 4.3 eV. Furthermore, the performance of the photodetector is discussed.
二维WS领域已取得重大进展，但要精确控制掺杂过程以实现所需性能，并解释这些新型材料中的复杂物理现象，仍需深入研究。在本研究中，采用化学气相沉积技术合成了Nb掺杂的WS，得到边长为12 - 20μm的三角形薄片。X射线光电子能谱分析表明，Nb替代缺陷起到电子受体的作用。Nb掺杂的WS薄片的层间力和横向力分别接近1 nN和150 pN。随着掺杂浓度的增加，Nb掺杂的WS的价带最大能量范围为4.06 eV至4.3 eV。此外，还讨论了光电探测器的性能。
