Alegaonkar Prashant S, Baskey Himangshu B
Department of Physics, School of Basic Sciences, Central University of Punjab, Bathinda, Punjab, 151401, India.
Stealth & Camouflage Division, Defence Material Store R & D Establishment, DRDO, GT Road, Kanpur, UP, 208013, India.
Sci Rep. 2024 Oct 8;14(1):23445. doi: 10.1038/s41598-024-71559-0.
The work report on architecture of integrated frequency selective meta-surface (IFSMS) absorbers for aerospace stealth applications. Fabricated IFSMS comprised of a pattern metasurface integrated with dielectric interlayer and conducting ground. Initially, a supercell (2 × 2-unit cell: 24 × 24 mm) was designed with a fourfold topological symmetry. Supercell produces impedances (R), inductances (L), and capacitances (C) in tune with design on its interaction with microwave. R performance was tested at variable incident transverse electric/magnetic (TE/TM) modes over, Θ, 0°-60° and at the normal incidence (TE), against a planer, clockwise rotation over, Φ, 0°-90°. The mode stability and rotational invariance was analyzed for displacement current- and power-density distributions. The impedance behavior and phase reversal S reflection coefficient studies revealed the emergence of mid-band Fabry-Perot mode distinguishing LC behavior of the circuit. The meta-pattern was manufactured by mask lithography using a customized resistive micro-carbon ink and imprinted onto dielectric/ground tile (dimension: 30 × 30 cm). Structure-property relationship of the ink material was investigated using SEM, XRD, FTIR, UV-visible spectroscopy to reveled surface properties of imprinted material. The absorber was subjected to the free space measurements over C (4-8), X (8-12), and Ku (12-18 GHz) bands, including pristine interlayer dielectrics. The simulated and experimental R data was found to be in excellent agreement. The proposed IFSMS design is a potential candidate for the stealth application.
用于航空航天隐身应用的集成频率选择超表面(IFSMS)吸收器的工作报告。制造的IFSMS由与介电中间层和导电接地层集成的图案化超表面组成。最初,设计了一个具有四重拓扑对称性的超单元(2×2单元胞:24×24毫米)。超单元在与微波相互作用时产生与设计相匹配的阻抗(R)、电感(L)和电容(C)。在0°至60°的可变入射横向电/磁(TE/TM)模式下以及在垂直入射(TE)时,针对平面,在0°至90°的顺时针旋转范围内测试了R性能。分析了位移电流和功率密度分布的模式稳定性和旋转不变性。阻抗行为和相位反转S反射系数研究揭示了中带法布里-珀罗模式的出现,该模式区分了电路的LC行为。通过使用定制的电阻性微碳墨水的掩膜光刻制造元图案,并将其印刻在介电/接地瓦片(尺寸:30×30厘米)上。使用扫描电子显微镜(SEM)、X射线衍射(XRD)、傅里叶变换红外光谱(FTIR)、紫外可见光谱研究了墨水材料的结构-性能关系,以揭示印刻材料的表面特性。在包括原始中间层电介质的C(4-8)、X(8-12)和Ku(12-18 GHz)频段上对吸收器进行了自由空间测量。发现模拟和实验的R数据非常吻合。所提出的IFSMS设计是隐身应用的潜在候选方案。