Liu Zhihui, Yang Yumeng, Sun Yi, Guo Tengda, Shen Kai, Cheng Yongjun, Wang Bi, Hu Kai, Zhang Chuanbing, Hao Gang, Zhou Jiankang, Wu Mengxuan, Cui Baoli, Ding Wanyu, Wang Zixi
College of Materials Science and Engineering, Dalian Jiaotong University, Dalian, 116028, China.
State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing, 100084, China.
Small. 2025 Jan;21(1):e2404829. doi: 10.1002/smll.202404829. Epub 2024 Oct 10.
In the general analysis of thin-film growth processes, it is often assumed that the temperature of the film growth surface is the same as the temperature of the film growth substrate. However, a temperature gradient exists between the film growth surface and film growth substrate. Using the growth surface of TiO thin films as an example, the temperature gradient of the film growth surface is tested and analyzed. A NiCr/NiSi thin-film thermocouple is fabricated using the direct-current pulse magnetron sputtering method. A three-layer NiCr/NiSi thin-film thermocouple temperature measurement system is established to measure the temperature gradient of the film growth surface. The growth surface temperature and substrate temperature of the TiO thin films are measured. For a sputtering power density of 0.83 W cm , the temperature difference between the first and second layers is 104.79 °C, while the temperature difference between the second and third layers is 39.92 °C. A standard K-type thermocouple is used to measure the substrate temperature, which is recorded to be 132.05 °C, consistent with common measurements of substrate temperature. The heat conduction on the film growth surface in the vacuum chamber is examined and a model for the temperature measurement device during film growth is constructed.
在薄膜生长过程的一般分析中，通常假定薄膜生长表面的温度与薄膜生长衬底的温度相同。然而，在薄膜生长表面与薄膜生长衬底之间存在温度梯度。以TiO薄膜的生长表面为例，对薄膜生长表面的温度梯度进行了测试与分析。采用直流脉冲磁控溅射法制备了NiCr/NiSi薄膜热电偶。建立了三层NiCr/NiSi薄膜热电偶温度测量系统，以测量薄膜生长表面的温度梯度。对TiO薄膜的生长表面温度和衬底温度进行了测量。对于0.83 W/cm的溅射功率密度，第一层和第二层之间的温差为104.79℃，而第二层和第三层之间的温差为39.92℃。使用标准K型热电偶测量衬底温度，记录为132.05℃，这与衬底温度的常规测量结果一致。研究了真空室内薄膜生长表面的热传导情况，并构建了薄膜生长过程中温度测量装置的模型。
