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用于钙钛矿发光二极管应用的硅纳米片封装 CsPbBr 纳米晶体中的 Förster 共振能量转移和增强发射

Förster Resonance Energy Transfer and Enhanced Emission in CsPbBr Nanocrystals Encapsulated in Silicon Nano-Sheets for Perovskite Light Emitting Diode Applications.

作者信息

Herrera Mondragon Araceli, Gonzalez Rodriguez Roberto, Hurley Noah, Varghese Sinto, Jiang Yan, Squires Brian, Cheng Maoding, Davis Brooke, Jiang Qinglong, Mortazavi Mansour, Kaul Anupama B, Coffer Jeffery L, Cui Jingbiao, Lin Yuankun

机构信息

Department of Physics, University of North Texas, Denton, TX 76203, USA.

Department of Chemistry and Physics, University of Arkansas, Pine Bluff, AR 71601, USA.

出版信息

Nanomaterials (Basel). 2024 Oct 3;14(19):1596. doi: 10.3390/nano14191596.

Abstract

Encapsulating CsPbBr quantum dots in silicon nano-sheets not only stabilizes the halide perovskite, but also takes advantage of the nano-sheet for a compatible integration with the traditional silicon semiconductor. Here, we report the preparation of un-passivated CsPbBr ellipsoidal nanocrystals and pseudo-spherical quantum dots in silicon nano-sheets and their enhanced photoluminescence (PL). For a sample with low concentrations of quantum dots in silicon nano-sheets, the emission from CsPbBr pseudo-spherical quantum dots is quenched and is dominated with Pb ion/silicene emission, which is very stable during the whole measurement period. For a high concentration of CsPbBr ellipsoidal nanocrystals in silicon nano-sheets, we have observed Förster resonance energy transfer with up to 87% efficiency through the oscillation of two PL peaks when UV excitation switches between on and off, using recorded video and PL lifetime measurements. In an area of a non-uniform sample containing both ellipsoidal nanocrystals and pseudo-spherical quantum dots, where Pb ion/silicene emissions, broadband emissions from quantum dots, and bandgap edge emissions (515 nm) appear, the 515 nm peak intensity increases five times over 30 min of UV excitation, probably due to a photon recycling effect. This irradiated sample has been stable for one year of ambient storage. CsPbBr quantum dots encapsulated in silicon nano-sheets can lead to applications of halide perovskite light emitting diodes (PeLEDs) and integration with traditional semiconductor materials.

摘要

将CsPbBr量子点封装在硅纳米片中不仅可以稳定卤化物钙钛矿,还能利用纳米片与传统硅半导体实现兼容集成。在此,我们报告了在硅纳米片中制备未钝化的CsPbBr椭球形纳米晶体和准球形量子点及其增强的光致发光(PL)。对于硅纳米片中量子点浓度较低的样品,CsPbBr准球形量子点的发射被淬灭,主要以Pb离子/硅烯发射为主,在整个测量期间非常稳定。对于硅纳米片中高浓度的CsPbBr椭球形纳米晶体,通过记录视频和PL寿命测量,当紫外激发在开启和关闭之间切换时,我们观察到通过两个PL峰的振荡实现了高达87%效率的Förster共振能量转移。在一个同时包含椭球形纳米晶体和准球形量子点的非均匀样品区域,出现了Pb离子/硅烯发射、量子点的宽带发射和带隙边缘发射(515 nm),在紫外激发30分钟内,515 nm峰强度增加了五倍,这可能是由于光子回收效应。该辐照样品在环境储存一年后仍保持稳定。封装在硅纳米片中的CsPbBr量子点可用于卤化物钙钛矿发光二极管(PeLED)的应用以及与传统半导体材料的集成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2965/11478374/7a90c5fbb9e5/nanomaterials-14-01596-g001.jpg

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