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磁性微丝的螺旋退火

Spiral Annealing of Magnetic Microwires.

作者信息

Chizhik Alexander, Corte-Leon Paula, Zhukova Valentina, Blanco Juan Mari, Gonzalez Julian, Zhukov Arcady

机构信息

Department of Polymers and Advanced Materials, University of Basque Country, UPV/EHU, 20018 San Sebastian, Spain.

Department of Applied Physics, EIG, University of Basque Country, UPV/EHU, 20018 San Sebastian, Spain.

出版信息

Sensors (Basel). 2024 Sep 26;24(19):6239. doi: 10.3390/s24196239.

DOI:10.3390/s24196239
PMID:39409279
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11478632/
Abstract

A preprocessing technique named "spiral annealing" was applied for the first time to magnetic microwires. In this process, the sample was arranged in a flat spiral shape during annealing, and subsequent measurements were conducted on the unbent sample with the induced stress distribution along and transverse to the sample. The research utilized both magnetic and magneto-optical methods. The anisotropy field magnitude in both the volume and surface of the microwire was measured, and for the first time, a direct correlation between the anisotropy field and the curvature of a spirally annealed microwire was established. Additionally, a connection between the type of surface domain structure and the degree of spiral curvature was identified. The preservation of the distribution of spiral annealing-induced magnetic properties both along and across the microwire is a key effect influencing the technological application of the microwire. The range of induced curvature within which a specific helical magnetic structure can exist was also determined. This insight links the conditions of spiral annealing to the selection of microwires as active elements in magnetic sensors.

摘要

一种名为“螺旋退火”的预处理技术首次应用于磁性微丝。在这个过程中，样品在退火期间被排列成扁平螺旋形状，随后对未弯曲的样品进行测量，测量其沿样品方向和垂直于样品方向的感应应力分布。该研究采用了磁性和磁光方法。测量了微丝体积和表面的各向异性场强度，并且首次建立了各向异性场与螺旋退火微丝曲率之间的直接关联。此外，还确定了表面畴结构类型与螺旋曲率程度之间的联系。沿微丝方向和垂直于微丝方向保持螺旋退火诱导的磁性分布是影响微丝技术应用的关键效应。还确定了特定螺旋磁结构能够存在的感应曲率范围。这一见解将螺旋退火条件与选择微丝作为磁传感器中的活性元件联系起来。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/d097d29d1ca1/sensors-24-06239-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/fe9d042633a6/sensors-24-06239-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/1e8dc881772f/sensors-24-06239-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/cc9bee1e6087/sensors-24-06239-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/e17d3f152f36/sensors-24-06239-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/773238b9ad04/sensors-24-06239-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/5051e740ffe9/sensors-24-06239-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/458ee175089c/sensors-24-06239-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/c77638062cc4/sensors-24-06239-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/d097d29d1ca1/sensors-24-06239-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/fe9d042633a6/sensors-24-06239-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/1e8dc881772f/sensors-24-06239-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/cc9bee1e6087/sensors-24-06239-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/e17d3f152f36/sensors-24-06239-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/773238b9ad04/sensors-24-06239-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/5051e740ffe9/sensors-24-06239-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/458ee175089c/sensors-24-06239-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/c77638062cc4/sensors-24-06239-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4aee/11478632/d097d29d1ca1/sensors-24-06239-g009.jpg

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Bending Strain-Tailored Magnetic and Electronic Transport Properties of Reactively Sputtered γ'-FeN/Muscovite Epitaxial Heterostructures toward Flexible Spintronics.面向柔性自旋电子学的反应溅射γ'-FeN/白云母外延异质结构的弯曲应变定制磁学和电子输运性质
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