Reduction of recombination at the interface of perovskite and electron transport layer with graded pt quantum dot doping in ambient air-processed perovskite solar cell.

The study of charge transfer in thin film solar cells made of several layers is of high importance since they may lose their energy via the recombination process at the interfaces, specifically at the interface of the electron transport layer (ETL) and perovskite. Titanium dioxide (TiO) is mostly used as an ETL in perovskite solar cells due to its many advantages. However, TiO has some disadvantages, such as low electron mobility compared to the perovskite layer and electron trap states on its top at the interface. These effects cause the accumulation of carriers at the ETL/perovskite interface then the non-radiative recombination will be enhanced, which is considered as one of the significant losses in the Perovskite Solar Cells (PSCs). In this work, a new technique is taken for more optimal ETL doping. We fabricated the ETL layers with graded doping of platinum quantum dots (Pt QDs), in which Pt QDs concentration is high at the ETL/Perovskite interface and zero at the FTO/ETL interface. This strategy not only suppresses the recombination at the ETL/perovskite interface and subsequently enhances the device efficiency from 12.92 to 14.36% but also improves the stability of the PSCs.