Guo Liang, Wang Suhao, Chu Xuefeng, Wang Chao, Chi Yaodan, Yang Xiaotian
Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.
Department of Basic Science, Jilin Jianzhu University, Changchun 130118, China.
Micromachines (Basel). 2024 Sep 30;15(10):1235. doi: 10.3390/mi15101235.
The primary objective of this research paper is to explore strategies for enhancing the electrical performance of dual active layer thin film transistors (TFTs) utilizing LZTO/ZTO as the bilayer architecture. By systematically adjusting the thickness of the active layers, we achieved significant improvements in the performance of the LZTO/ZTO TFTs. An XPS analysis was performed to elucidate the impact of the varying O element distribution ratio within the LZTO/ZTO bilayer thin film on the TFTs performance, which was directly influenced by the modification in the active layer thickness. Furthermore, we utilized atomic force microscopy to analyze the effect of altering the active layer thickness on the surface roughness of the LZTO/ZTO bilayer film and the impact of this roughness on the TFTs electrical performance. Through the optimization of the ZTO active layer thickness, the LZTO/ZTO TFT exhibited an mobility of 10.26 cm V s and a switching current ratio of 5.7 × 10, thus highlighting the effectiveness of our approach in enhancing the electrical characteristics of the TFT device.
本研究论文的主要目标是探索利用LZTO/ZTO作为双层结构来提高双有源层薄膜晶体管（TFT）电学性能的策略。通过系统地调整有源层的厚度，我们实现了LZTO/ZTO TFT性能的显著提升。进行了XPS分析，以阐明LZTO/ZTO双层薄膜中不同O元素分布比例对TFT性能的影响，而这直接受到有源层厚度变化的影响。此外，我们利用原子力显微镜分析了改变有源层厚度对LZTO/ZTO双层薄膜表面粗糙度的影响以及这种粗糙度对TFT电学性能的影响。通过优化ZTO有源层厚度，LZTO/ZTO TFT展现出10.26 cm² V⁻¹ s⁻¹的迁移率和5.7×10⁵的开关电流比，从而突出了我们方法在增强TFT器件电学特性方面的有效性。
