Wang Dapeng, Furuta Mamoru, Tomai Shigekazu, Yano Koki
Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China.
School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan.
Nanomaterials (Basel). 2020 Mar 27;10(4):617. doi: 10.3390/nano10040617.
Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. Owing to their ability to offer mobility, metal oxide semiconductor materials can enable high-performance TFTs for next-generation integrated display devices. Nevertheless, further breakthroughs of metal oxide TFTs are mainly obstructed by their long-term variability, the reason for which is not yet fully understood. Herein, TFTs based on InSnZnO (ITZO) with various thicknesses () were prepared and their long-term stabilities under test temperatures and drain current stress were investigated. The results indicate that ITZO TFTs exhibit outstanding electrical properties regardless of the , including a high saturated mobility of over 35 cmVs and sharp subthreshold swing. Note that the transfer and output characteristic curves of the device with a thick of 100 nm express an abnormal current surge when high gate and drain voltages are exerted, which is attributed to the floating body effect, caused when the imposed electric field induces impact ionization near the drain side. More interestingly, these drain current stress results further suggest that the abnormal shift behavior of the electrical properties of the ITZO TFTs with a of greater than 75 nm is observed to deteriorate gradually with increasing temperature and drain current bias. This study addresses that such a degradation effect should be restrained for the operation of high-mobility devices.
近年来，由金属氧化物半导体组成的薄膜晶体管（TFT）器件在全球范围内引起了巨大的研究关注。由于其能够提供迁移率，金属氧化物半导体材料可用于制造适用于下一代集成显示设备的高性能TFT。然而，金属氧化物TFT的进一步突破主要受到其长期稳定性变化的阻碍，其原因尚未完全明确。在此，制备了具有不同厚度（）的基于铟锡氧化锌（ITZO）的TFT，并研究了它们在测试温度和漏极电流应力下的长期稳定性。结果表明，无论厚度如何，ITZO TFT均表现出出色的电学性能，包括超过35 cmVs的高饱和迁移率和陡峭的亚阈值摆幅。需要注意的是，当施加高栅极和漏极电压时，厚度为100 nm的厚器件的转移和输出特性曲线会出现异常电流激增，这归因于浮体效应，即施加的电场在漏极侧附近引起碰撞电离时产生的效应。更有趣的是，这些漏极电流应力结果进一步表明，对于厚度大于75 nm的ITZO TFT，其电学性能的异常偏移行为会随着温度和漏极电流偏置的增加而逐渐恶化。该研究指出，对于高迁移率器件的运行，应抑制这种退化效应。
