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基于参考磁场的隧道磁电阻微磁传感器温度补偿方法

Temperature Compensation Method for Tunnel Magnetoresistance Micro-Magnetic Sensors Through Reference Magnetic Field.

作者信息

Kuai Tao, Du Qingfa, Hu Jiafei, Shi Shilong, Li Peisen, Chen Dixiang, Pan Mengchun

机构信息

College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.

Northwest Institute of Mechanical and Electrical Engineering, Xianyang 712099, China.

出版信息

Micromachines (Basel). 2024 Oct 20;15(10):1271. doi: 10.3390/mi15101271.

DOI:10.3390/mi15101271
PMID:39459145
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11509234/
Abstract

The sensitivity of Tunnel Magnetoresistance (TMR) sensors is characterized by significant temperature drift and poor sensitivity drift repeatability, which severely impairs measurement accuracy. Conventional temperature compensation techniques are often hindered by low compensation precision, inadequate real-time performance, and an inability to effectively address the issue of poor repeatability in temperature drift characteristics. To overcome these challenges, this paper introduces a novel method for suppressing temperature drift in TMR sensors. In this method, an alternating reference magnetic field is applied to TMR sensors, and the output amplitude at the frequency of the reference magnetic field is calculated to compensate the sensitivity temperature drift in real time. Temperature characteristic tests were conducted in a non-magnetic temperature test chamber, and the results revealed that the proposed method significantly reduced the TMR sensitivity drift coefficient from 985.39 ppm/°C to 59.08 ppm/°C. Additionally, the repeatability of sensitivity temperature characteristic curves was enhanced, with a reduction in root mean square error from 0.84 to 0.21. This approach effectively mitigates temperature-induced sensitivity drift without necessitating the use of a temperature sensor, and has the advantages of real-time performance and repeatability, providing a new approach for the high-precision temperature drift suppression of TMR.

摘要

隧道磁电阻(TMR)传感器的灵敏度具有显著的温度漂移和较差的灵敏度漂移重复性,这严重影响了测量精度。传统的温度补偿技术常常受到补偿精度低、实时性不足以及无法有效解决温度漂移特性重复性差问题的阻碍。为了克服这些挑战,本文介绍了一种抑制TMR传感器温度漂移的新方法。在该方法中,向TMR传感器施加交变参考磁场,并计算参考磁场频率下的输出幅度以实时补偿灵敏度温度漂移。在非磁性温度测试腔中进行了温度特性测试,结果表明,所提出的方法将TMR灵敏度漂移系数从985.39 ppm/°C显著降低至59.08 ppm/°C。此外,灵敏度温度特性曲线的重复性得到提高,均方根误差从0.84降至0.21。该方法无需使用温度传感器即可有效减轻温度引起的灵敏度漂移,具有实时性和重复性的优点,为TMR的高精度温度漂移抑制提供了一种新方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/286585287502/micromachines-15-01271-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/4408f40998d3/micromachines-15-01271-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/7b6109ccfee0/micromachines-15-01271-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/fdf77a4ee674/micromachines-15-01271-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/92389140e4fd/micromachines-15-01271-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/144d9f08331b/micromachines-15-01271-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/0bfdea833f8b/micromachines-15-01271-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/62359ef6befc/micromachines-15-01271-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/c9359a02781a/micromachines-15-01271-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/2cc353136fa5/micromachines-15-01271-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/286585287502/micromachines-15-01271-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/4408f40998d3/micromachines-15-01271-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/7b6109ccfee0/micromachines-15-01271-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/fdf77a4ee674/micromachines-15-01271-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/92389140e4fd/micromachines-15-01271-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/144d9f08331b/micromachines-15-01271-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/0bfdea833f8b/micromachines-15-01271-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/62359ef6befc/micromachines-15-01271-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/c9359a02781a/micromachines-15-01271-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/2cc353136fa5/micromachines-15-01271-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb45/11509234/286585287502/micromachines-15-01271-g010.jpg

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本文引用的文献

1
Tunnel Magnetoresistance Sensor with AC Modulation and Impedance Compensation for Ultra-Weak Magnetic Field Measurement.用于超弱磁场测量的具有交流调制和阻抗补偿的隧道磁阻传感器
Sensors (Basel). 2022 Jan 28;22(3):1021. doi: 10.3390/s22031021.
2
Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature.室温下磁性隧道结中磁化旋转和隧穿磁电阻的电场操纵
Adv Mater. 2014 Jul 2;26(25):4320-5. doi: 10.1002/adma.201400617. Epub 2014 Apr 19.