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热压法烧结的掺锡PBZT铁电陶瓷的性能

Properties of Sn-Doped PBZT Ferroelectric Ceramics Sintered by Hot-Pressing Method.

作者信息

Brzezińska Dagmara, Bochenek Dariusz, Zubko Maciej, Niemiec Przemysław, Matuła Izabela

机构信息

Institute of Materials Engineering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1 A, 41-500 Chorzów, Poland.

出版信息

Materials (Basel). 2024 Oct 17;17(20):5072. doi: 10.3390/ma17205072.

DOI:10.3390/ma17205072
PMID:39459778
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11509812/
Abstract

This work investigated the structure, microstructure, and ferroelectric and dielectric behavior of (PbBa)(ZrTi)SnO (PBZT_Sn) solid solution with variable tin content in the range = 0.00-0.08. Synthesis was carried out using the powder calcination method, and sintering was carried out using the hot-pressing method. For all the PBZT_Sn samples at room temperature, X-ray diffractograms confirmed the presence of an orthorhombic (OR) crystal structure with space group P, and the microstructure is characterized by densely packed and properly shaped grains with an average size of 1.36 µm to 1.73 µm. At room temperature, PBZT_Sn materials have low permittivity values ' ranging from 265 to 275, whereas, at the ferroelectric-paraelectric phase transition temperature (RE-C), the permittivity is high (from 8923 to 12,141). The increase in the tin dopant in PBZT_Sn lowers permittivity and dielectric loss and changes the scope of occurrence of phase transitions. The occurring dispersion of the dielectric constant and dielectric loss at low frequencies, related to the Maxwell-Wagner behavior, decreases with increasing tin content in the composition of PBZT_Sn. Temperature studies of the dielectric and ferroelectric properties revealed anomalies related to the phase transitions occurring in the PBZT_Sn material. With increasing temperature in PBZT_Sn, phase transitions occur from orthorhombic (OR) to rhombohedral (RE) and cubic (C). The cooling cycle shifts the temperatures of the phase transitions towards lower temperatures. The test results were confirmed by XRD Rietveld analysis at different temperatures. The beneficial dielectric and ferroelectric properties suggest that the PBZT_Sn materials are suitable for micromechatronic applications as pulse capacitors or actuator elements.

摘要

本研究考察了锡含量在 = 0.00 - 0.08范围内变化的(PbBa)(ZrTi)SnO(PBZT_Sn)固溶体的结构、微观结构以及铁电和介电行为。采用粉末煅烧法进行合成,并使用热压法进行烧结。对于所有室温下的PBZT_Sn样品,X射线衍射图证实存在空间群为P的正交(OR)晶体结构,其微观结构的特征是晶粒密集堆积且形状规整,平均尺寸为1.36 µm至1.73 µm。在室温下,PBZT_Sn材料的介电常数'值较低,范围为265至275,而在铁电 - 顺电相变温度(RE - C)时,介电常数较高(从8923至12,141)。PBZT_Sn中锡掺杂剂的增加会降低介电常数和介电损耗,并改变相变发生的范围。与麦克斯韦 - 瓦格纳行为相关的低频下介电常数和介电损耗的色散随着PBZT_Sn成分中锡含量的增加而减小。介电和铁电性能的温度研究揭示了与PBZT_Sn材料中发生的相变相关的异常现象。随着PBZT_Sn温度升高,会发生从正交(OR)到菱方(RE)和立方(C)的相变。冷却循环会将相变温度移向更低温度。不同温度下的XRD里特维尔德分析证实了测试结果。有益的介电和铁电性能表明PBZT_Sn材料适用于作为脉冲电容器或致动器元件的微机电应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/9dd8792efc53/materials-17-05072-g009.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/d4e0b81885ac/materials-17-05072-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/658369380ea6/materials-17-05072-g007.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/0a750f7d8ce0/materials-17-05072-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/55fb6e3cb913/materials-17-05072-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/d4e0b81885ac/materials-17-05072-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/658369380ea6/materials-17-05072-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/f439c46ce1df/materials-17-05072-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c74d/11509812/9dd8792efc53/materials-17-05072-g009.jpg

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