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通过相变工程实现反铁电体中电容的巨大增强和快速稳定。

Giant enhancement and quick stabilization of capacitance in antiferroelectrics by phase transition engineering.

作者信息

Hu Tengfei, Fu Zhengqian, Liu Xiaowei, Li Linhai, Xu Chenhong, Zhou YongXin, Cao Fei, Xia Jiake, Chen Xuefeng, Wang Genshui, Xu Fangfang

机构信息

State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.

School of Chemistry and Material Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, 1 Sub-lane Xiangshan, Hangzhou, 310024, China.

出版信息

Nat Commun. 2024 Oct 28;15(1):9293. doi: 10.1038/s41467-024-53661-z.

Abstract

The antiferroelectric-ferroelectric phase transition is a basic principle that holds promise for antiferroelectric ceramics in high capacitance density nonlinear capacitors. So far, the property optimization based on antiferroelectric-ferroelectric transition is solely undertaken by chemical composition tailoring. Alternately, here we propose a phase transition engineering tactic by applying pulsed electric stimulus near the critical electric field, which finally results in ~54.3% enhancement and quick stabilization of capacitance density in PbLa(ZrSnTi)O antiferroelectric ceramics. Ex-situ and in-situ structural characterizations show that electric stimuli can induce the charming successive structural evolution, including domain evolution from multidomain to monodomain state, and modulation period change from 7.49 to 7.73. Structure-property correlation indicates that the antiferroelectric-ferroelectric phase transition engineering mainly stems from the unexpected irreversible recovery of the modulated structures. The present findings would deepen the understanding of the structural phase transition and provoke composition-independent post-treatment property innovation in the incommensurate antiferroelectric materials and devices.

摘要

反铁电-铁电相变是一项基本原理,为反铁电陶瓷应用于高电容密度非线性电容器带来了希望。到目前为止,基于反铁电-铁电转变的性能优化仅通过化学成分调整来实现。在此,我们提出了一种相变工程策略,即在临界电场附近施加脉冲电刺激,这最终使PbLa(ZrSnTi)O反铁电陶瓷的电容密度提高了约54.3%,并快速稳定下来。非原位和原位结构表征表明,电刺激可诱导迷人的连续结构演变,包括从多畴到单畴状态的畴演变,以及调制周期从7.49变为7.73。结构-性能相关性表明,反铁电-铁电相变工程主要源于调制结构意外的不可逆恢复。本研究结果将加深对结构相变的理解,并激发在非相称反铁电材料和器件中与成分无关的后处理性能创新。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f4d2/11519524/8474ed9666e1/41467_2024_53661_Fig1_HTML.jpg

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