Gaury Benoit, Haney Paul M
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA and Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Phys Rev Appl. 2017 Nov;8(5). doi: 10.1103/physrevapplied.8.054026.
We present analytical relations for the dark recombination current of a junction with positively charged columnar grain boundaries in the high defect density regime. We consider two defect state configurations relevant for positively charged grain boundaries: a single donor state and a continuum of both acceptors and donors. Compared to a continuum of acceptor+donor states, or to the previously studied single acceptor+donor state, the grain boundary recombination of a single donor state is suppressed by orders of magnitude. We show numerically that superposition holds near the open-circuit voltage , so that our dark relations determine for a given short circuit current . We finally explicitly show how depends on the these two grain boundary defect state configurations.
我们给出了在高缺陷密度 regime 中具有带正电柱状晶界的结的暗复合电流的解析关系。我们考虑了与带正电晶界相关的两种缺陷态构型：单个施主态以及受主和施主的连续态。与受主 + 施主态的连续态或先前研究的单个受主 + 施主态相比，单个施主态的晶界复合被抑制了几个数量级。我们通过数值表明，在开路电压附近叠加成立，因此我们的暗关系对于给定的短路电流确定了 。我们最终明确展示了 如何依赖于这两种晶界缺陷态构型。
