Prikhodko A S, Zallo E, Calarco R, Borgardt N I
National Research University of Electron Technology (MIET), Zelenograd 124498, Moscow, Russia.
Walter-Schottky-Institut and TUM School of Natural Sciences, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
Ultramicroscopy. 2024 Dec;267:114063. doi: 10.1016/j.ultramic.2024.114063. Epub 2024 Oct 18.
The structural studies of two-dimensional (2D) van der Waals heterostructures and understanding of their relationship with the orientation of crystalline substrates using transmission electron microscopy (TEM) presents a challenge in developing an easy-to-use plan-view specimen preparation technique. In this report, we introduce a simple approach for high-quality plan-view specimen preparation utilizing a dual beam system comprising focused ion beam and scanning electron microscopy. To protect the atomically thin 2D heterostructure during the preparation process, we employ an epoxy layer. This layer serves as a protective barrier and enables the creation of a TEM specimen comprising a thin substrate fragment with an overgrown 2D structure covered by a thin, electron-transparent epoxy layer. The coexistence of both 2D layers and substrate is essential for investigating the relative crystallographic orientations between the grown 2D structures and the substrates. The thickness of the specimen is monitored using low-voltage scanning electron microscopy. We apply this technique to prepare plan-view specimens of 2D germanium-antimony-telluride (GST) on Si and hexagonal boron nitride (h-BN)/epitaxial graphene (EG) heterostructures grown on 6H-SiC substrates. The grain-like atomic structure observed in the 2.2 nm thick GST layer on Si substrate provides evidence of the mosaicity of GST during the early stages of epitaxial growth. H-BN/EG on 6H-SiC structural studies indicate a rotation of h-BN/EG around the 6H-SiC[0001] axis by an angle of 30°. The observed BN particles with sizes in the nanometer range on top of the sample have the wurtzite lattice type and random orientation. The developed specimen preparation technique offers a powerful tool for TEM studies of atomically thin layers on crystals. Its simplicity and ability to provide valuable insights into the in-plane relationships between 2D structures and crystalline substrates make it a promising complement to grazing incident X-ray diffraction.
利用透射电子显微镜(TEM)对二维(2D)范德华异质结构进行结构研究,并了解它们与晶体衬底取向的关系,这对开发一种易于使用的平面视图样品制备技术提出了挑战。在本报告中,我们介绍了一种利用聚焦离子束和扫描电子显微镜组成的双束系统制备高质量平面视图样品的简单方法。为了在制备过程中保护原子级薄的二维异质结构,我们采用了环氧树脂层。该层作为保护屏障,能够制备出一个TEM样品,该样品包含一个薄的衬底碎片,其上生长有二维结构,并被一层薄的电子透明环氧树脂层覆盖。二维层和衬底的共存对于研究生长的二维结构与衬底之间的相对晶体学取向至关重要。使用低电压扫描电子显微镜监测样品的厚度。我们应用该技术制备了在Si上的二维锗锑碲(GST)以及在6H-SiC衬底上生长的六方氮化硼(h-BN)/外延石墨烯(EG)异质结构的平面视图样品。在Si衬底上2.2 nm厚的GST层中观察到的粒状原子结构提供了外延生长早期GST镶嵌性的证据。6H-SiC上的h-BN/EG结构研究表明,h-BN/EG围绕6H-SiC[0001]轴旋转了30°。在样品顶部观察到的尺寸在纳米范围内的BN颗粒具有纤锌矿晶格类型且取向随机。所开发的样品制备技术为晶体上原子级薄层的TEM研究提供了一个强大的工具。其简单性以及能够提供关于二维结构与晶体衬底之间面内关系的有价值见解,使其成为掠入射X射线衍射的一个有前景的补充。